STF11NM80
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STMicroelectronics STF11NM80

Manufacturer No:
STF11NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 11A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF11NM80 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes ST's revolutionary MDmesh™ technology, which combines the multiple drain process with the company's PowerMESH™ horizontal layout. This technology ensures extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STF11NM80 is designed for superior dynamic performance, making it an ideal choice for various high-power applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C11A
Continuous Drain Current (ID) at TC = 100°C8A
Pulsed Drain Current (IDM)44A
Total Dissipation at TC = 25°C150W
Static Drain-Source On Resistance (RDS(on))< 0.40Ω
RDS(on)*Qg14 Ω*nC
Thermal Resistance Junction-Case (Rthj-case)3.6°C/W
Operating Junction Temperature (TJ)-65 to 150°C
Storage Temperature (Tstg)-65 to 150°C

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • Best RDS(on)*Qg in the industry
  • Utilizes ST's proprietary strip technique for enhanced dynamic performance
  • 800 V drain-source voltage rating
  • 11 A continuous drain current at TC = 25°C
  • Excellent avalanche characteristics
  • Zener-protected and 100% avalanche tested

Applications

The STF11NM80 is primarily used in switching applications, including:

  • Flyback converters
  • LED lighting
  • Other high-power switching circuits where low on-resistance and high reliability are crucial.

Q & A

  1. What is the maximum drain-source voltage of the STF11NM80?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the continuous drain current at 25°C for the STF11NM80?
    The continuous drain current (ID) at TC = 25°C is 11 A.
  3. What is the static drain-source on resistance (RDS(on)) of the STF11NM80?
    The static drain-source on resistance (RDS(on)) is less than 0.40 Ω.
  4. What technology does the STF11NM80 use?
    The STF11NM80 uses STMicroelectronics' MDmesh™ technology.
  5. What are the key features of the STF11NM80?
    The key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.
  6. What are the typical applications of the STF11NM80?
    The typical applications include flyback converters, LED lighting, and other high-power switching circuits.
  7. What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 3.6 °C/W.
  8. What is the operating junction temperature range for the STF11NM80?
    The operating junction temperature range is -65 to 150 °C.
  9. Is the STF11NM80 Zener-protected and avalanche tested?
    Yes, the STF11NM80 is Zener-protected and 100% avalanche tested.
  10. What package types are available for the STF11NM80?
    The STF11NM80 is available in the TO-220FP package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:43.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STF11NM80 STF18NM80
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43.6 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V 2070 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 35W (Tc) 40W (Tc)
Operating Temperature -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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