Overview
The STF11NM80 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes ST's revolutionary MDmesh™ technology, which combines the multiple drain process with the company's PowerMESH™ horizontal layout. This technology ensures extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. The STF11NM80 is designed for superior dynamic performance, making it an ideal choice for various high-power applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDS) | 800 | V |
Gate-Source Voltage (VGS) | ±30 | V |
Continuous Drain Current (ID) at TC = 25°C | 11 | A |
Continuous Drain Current (ID) at TC = 100°C | 8 | A |
Pulsed Drain Current (IDM) | 44 | A |
Total Dissipation at TC = 25°C | 150 | W |
Static Drain-Source On Resistance (RDS(on)) | < 0.40 | Ω |
RDS(on)*Qg | 14 Ω*nC | |
Thermal Resistance Junction-Case (Rthj-case) | 3.6 | °C/W |
Operating Junction Temperature (TJ) | -65 to 150 | °C |
Storage Temperature (Tstg) | -65 to 150 | °C |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)*Qg in the industry
- Utilizes ST's proprietary strip technique for enhanced dynamic performance
- 800 V drain-source voltage rating
- 11 A continuous drain current at TC = 25°C
- Excellent avalanche characteristics
- Zener-protected and 100% avalanche tested
Applications
The STF11NM80 is primarily used in switching applications, including:
- Flyback converters
- LED lighting
- Other high-power switching circuits where low on-resistance and high reliability are crucial.
Q & A
- What is the maximum drain-source voltage of the STF11NM80?
The maximum drain-source voltage (VDS) is 800 V. - What is the continuous drain current at 25°C for the STF11NM80?
The continuous drain current (ID) at TC = 25°C is 11 A. - What is the static drain-source on resistance (RDS(on)) of the STF11NM80?
The static drain-source on resistance (RDS(on)) is less than 0.40 Ω. - What technology does the STF11NM80 use?
The STF11NM80 uses STMicroelectronics' MDmesh™ technology. - What are the key features of the STF11NM80?
The key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry. - What are the typical applications of the STF11NM80?
The typical applications include flyback converters, LED lighting, and other high-power switching circuits. - What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 3.6 °C/W. - What is the operating junction temperature range for the STF11NM80?
The operating junction temperature range is -65 to 150 °C. - Is the STF11NM80 Zener-protected and avalanche tested?
Yes, the STF11NM80 is Zener-protected and 100% avalanche tested. - What package types are available for the STF11NM80?
The STF11NM80 is available in the TO-220FP package.