STF18NM80
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STMicroelectronics STF18NM80

Manufacturer No:
STF18NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 17A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF18NM80 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced MDmesh™ technology. This device is available in the TO-220FP package and is designed for high-power switching applications. It offers exceptional electrical characteristics, including low on-resistance, high dv/dt, and excellent avalanche capabilities. The STF18NM80 is part of a family of MOSFETs that include the STB18NM80, STP18NM80, and STW18NM80, each available in different packages such as D²PAK, TO-220, and TO-247.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C17A
Pulsed Drain Current (IDM)68A
On-Resistance (RDS(on))< 0.295Ω
Total Dissipation at TC = 25°C190W
Maximum Operating Junction Temperature (Tj)150°C
Thermal Resistance Junction-Case (Rthj-case)3.13°C/W
Avalanche Current (IAS)4A
Single Pulse Avalanche Energy (EAS)600mJ

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Excellent dynamic performance due to MDmesh™ technology
  • High dv/dt capability
  • Available in TO-220FP package
  • ECOPACK® compliant for environmental sustainability

Applications

The STF18NM80 is suitable for various high-power switching applications, including:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Renewable energy systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STF18NM80?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the continuous drain current at 25°C for the STF18NM80?
    The continuous drain current (ID) at 25°C is 17 A.
  3. What is the on-resistance (RDS(on)) of the STF18NM80?
    The on-resistance (RDS(on)) is less than 0.295 Ω.
  4. What is the maximum operating junction temperature for the STF18NM80?
    The maximum operating junction temperature (Tj) is 150°C.
  5. What is the thermal resistance junction-case (Rthj-case) for the TO-220FP package?
    The thermal resistance junction-case (Rthj-case) for the TO-220FP package is 3.13 °C/W.
  6. Is the STF18NM80 100% avalanche tested?
    Yes, the STF18NM80 is 100% avalanche tested.
  7. What is the single pulse avalanche energy (EAS) for the STF18NM80?
    The single pulse avalanche energy (EAS) is 600 mJ.
  8. In which package is the STF18NM80 available?
    The STF18NM80 is available in the TO-220FP package.
  9. What technology is used in the STF18NM80?
    The STF18NM80 uses STMicroelectronics' MDmesh™ technology.
  10. Is the STF18NM80 ECOPACK® compliant?
    Yes, the STF18NM80 is ECOPACK® compliant for environmental sustainability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STB18NM80
STB18NM80
MOSFET N-CH 800V 17A D2PAK
STW18NM80
STW18NM80
MOSFET N-CH 800V 17A TO247-3
STF18NM80
STF18NM80
MOSFET N-CH 800V 17A TO220FP

Similar Products

Part Number STF18NM80 STF11NM80
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 8.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 43.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V 1630 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 35W (Tc)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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