STB18NM80
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STMicroelectronics STB18NM80

Manufacturer No:
STB18NM80
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 800V 17A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB18NM80 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing their revolutionary MDmesh™ technology. This device is part of a series that includes the STF18NM80, STP18NM80, and STW18NM80, each available in different packages such as D²PAK, TO-220FP, TO-220, and TO-247. The STB18NM80 is characterized by its extremely low on-resistance, high dv/dt, and excellent avalanche characteristics, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)800V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25°C17A
Continuous Drain Current (ID) at TC = 100°C10.71A
Pulsed Drain Current (IDM)68A
Total Dissipation at TC = 25°C190W
Thermal Resistance Junction-Case (Rthj-case)0.66°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Maximum Operating Junction Temperature (Tj)150°C
Maximum Lead Temperature for Soldering300°C
On-Resistance (RDS(on))< 0.295Ω

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely low on-resistance
  • High dv/dt and excellent avalanche characteristics
  • Utilizes ST’s proprietary strip technique for superior dynamic performance

Applications

The STB18NM80 is designed for various switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial and automotive systems
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage of the STB18NM80?
    The maximum drain-source voltage (VDS) is 800 V.
  2. What is the continuous drain current at 25°C?
    The continuous drain current (ID) at 25°C is 17 A.
  3. What is the thermal resistance junction-case for the TO-220 package?
    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.66 °C/W.
  4. What are the key features of the STB18NM80?
    The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, extremely low on-resistance, and high dv/dt with excellent avalanche characteristics.
  5. In which packages is the STB18NM80 available?
    The STB18NM80 is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.
  6. What is the maximum operating junction temperature?
    The maximum operating junction temperature (Tj) is 150 °C.
  7. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C.
  8. What technology is used in the STB18NM80?
    The STB18NM80 uses STMicroelectronics' MDmesh™ technology.
  9. What are some typical applications of the STB18NM80?
    Typical applications include power supplies, DC-DC converters, motor control, industrial and automotive systems, and high-frequency switching circuits.
  10. What is the total gate charge for the STB18NM80?
    The total gate charge (Qg) is approximately 70 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STB18NM80
STB18NM80
MOSFET N-CH 800V 17A D2PAK
STW18NM80
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STF18NM80
STF18NM80
MOSFET N-CH 800V 17A TO220FP

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