STW18NM80
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STMicroelectronics STW18NM80

Manufacturer No:
STW18NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 17A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW18NM80 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their revolutionary MDmesh™ technology. This device is available in various packages including D²PAK, TO-220FP, TO-220, and TO-247. The STW18NM80 is designed to offer extremely low on-resistance, high dv/dt, and excellent avalanche characteristics, making it suitable for a wide range of switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 800 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 17 A
Continuous Drain Current (ID) at TC = 100°C 10.71 A
Pulsed Drain Current (IDM) 68 A
Total Dissipation at TC = 25°C 190 W
Insulation Withstand Voltage (VISO) 2500 V
Storage Temperature (Tstg) -65 to 150 °C
Maximum Operating Junction Temperature (Tj) 150 °C
On-Resistance (RDS(on)) < 0.295 Ω
Thermal Resistance Junction-Case (Rthj-case) 0.66 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Excellent dynamic performance due to ST’s proprietary strip technique
  • High dv/dt capability
  • Available in D²PAK, TO-220FP, TO-220, and TO-247 packages

Applications

The STW18NM80 is primarily used in switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching circuits
  • Uninterruptible Power Supplies (UPS)
  • Industrial and consumer electronics requiring high power handling

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW18NM80?

    The maximum drain-source voltage (VDS) is 800 V.

  2. What are the available packages for the STW18NM80?

    The STW18NM80 is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.

  3. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 17 A.

  4. What is the maximum operating junction temperature (Tj)?

    The maximum operating junction temperature (Tj) is 150°C.

  5. What is the on-resistance (RDS(on)) of the STW18NM80?

    The on-resistance (RDS(on)) is less than 0.295 Ω.

  6. What are the key features of the STW18NM80?

    The key features include 100% avalanche testing, low input capacitance and gate charge, low gate input resistance, and excellent dynamic performance.

  7. What are the typical applications of the STW18NM80?

    The typical applications include power supplies, DC-DC converters, motor control, high-frequency switching circuits, and UPS systems.

  8. What is the thermal resistance junction-case (Rthj-case) of the STW18NM80?

    The thermal resistance junction-case (Rthj-case) is 0.66 °C/W.

  9. What is the insulation withstand voltage (VISO) of the STW18NM80?

    The insulation withstand voltage (VISO) is 2500 V.

  10. What is the storage temperature range for the STW18NM80?

    The storage temperature range is -65 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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In Stock

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Same Series
STB18NM80
STB18NM80
MOSFET N-CH 800V 17A D2PAK
STW18NM80
STW18NM80
MOSFET N-CH 800V 17A TO247-3
STF18NM80
STF18NM80
MOSFET N-CH 800V 17A TO220FP

Similar Products

Part Number STW18NM80 STW11NM80
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 8.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 43.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V 1630 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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