Overview
The STP110N7F6 is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET™ F6 series, known for its advanced technology and robust characteristics. This MOSFET is housed in a TO-220 package and is designed to handle high current and voltage applications. With a maximum drain-source voltage (Vds) of 68 V and a maximum drain current (Id) of 110 A, it is suitable for a wide range of power management and switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Part Number | STP110N7F6 | |
| Type of Transistor | N-channel MOSFET | |
| Maximum Drain-Source Voltage (Vds) | 68 | V |
| Maximum Drain Current (Id) | 110 | A |
| Maximum Gate-Source Voltage (Vgs) | 20 | V |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 4 | V |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.0065 | Ω |
| Maximum Power Dissipation (Pd) | 176 | W |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Total Gate Charge (Qg) | 100 | nC |
| Rise Time (tr) | 29 | nS |
| Output Capacitance (Coss) | 340 | pF |
| Package | TO-220 |
Key Features
- Very Low On-Resistance: With a typical Rds(on) of 0.0055 Ω, this MOSFET minimizes power losses and enhances efficiency in high-current applications.
- Very Low Gate Charge: Reduces the gate drive power loss, making it suitable for high-frequency switching applications.
- High Avalanche Ruggedness: Ensures robust performance and reliability under harsh operating conditions.
- Low Gate Drive Power Loss: Optimized for low gate charge, which reduces the overall power consumption and heat generation.
Applications
The STP110N7F6 is designed for various high-power and high-frequency switching applications, including:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-efficiency power management systems
- Industrial and automotive electronics
Q & A
- What is the maximum drain-source voltage of the STP110N7F6 MOSFET?
The maximum drain-source voltage (Vds) is 68 V.
- What is the maximum drain current of the STP110N7F6 MOSFET?
The maximum drain current (Id) is 110 A.
- What is the typical on-state resistance of the STP110N7F6 MOSFET?
The typical on-state resistance (Rds(on)) is 0.0055 Ω.
- What package type is the STP110N7F6 MOSFET available in?
The STP110N7F6 is available in a TO-220 package.
- What are the key features of the STP110N7F6 MOSFET?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- What are some common applications for the STP110N7F6 MOSFET?
Common applications include power supplies, DC-DC converters, motor control systems, and high-efficiency power management systems.
- What is the maximum gate-source voltage of the STP110N7F6 MOSFET?
The maximum gate-source voltage (Vgs) is 20 V).
- What is the maximum junction temperature of the STP110N7F6 MOSFET?
The maximum junction temperature (Tj) is 175 °C).
- What is the total gate charge of the STP110N7F6 MOSFET?
The total gate charge (Qg) is 100 nC).
- What is the rise time of the STP110N7F6 MOSFET?
The rise time (tr) is 29 nS).
