Overview
The STP110N8F6 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which results in very low on-resistance (RDS(on)) across all packages. The STP110N8F6 is housed in a TO-220 package and is designed for high-performance applications requiring low power loss and high reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Drain-Source Voltage (VDS) | 80 | V |
| Maximum Drain Current (ID) | 110 | A |
| Maximum Gate-Source Voltage (VGS) | 20 | V |
| Gate Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | 0.0056 (typ), 0.0065 (max) | Ω |
| Total Gate Charge (Qg) | 150 | nC |
| Maximum Power Dissipation (PTOT) | 200 | W |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Package | TO-220 |
Key Features
- Very low on-resistance: The STP110N8F6 exhibits very low RDS(on) values, making it suitable for applications requiring minimal power loss.
- Very low gate charge: This feature reduces the gate drive power, enhancing the overall efficiency of the device.
- High avalanche ruggedness: The MOSFET is designed to withstand high avalanche conditions, ensuring robust performance in demanding applications.
- Low gate drive power loss: The low gate charge and efficient gate drive characteristics minimize power consumption and heat generation.
Applications
The STP110N8F6 is primarily used in switching applications, such as power supplies, motor drives, and other high-power electronic systems where low on-resistance and high reliability are crucial.
Q & A
- What is the maximum drain-source voltage of the STP110N8F6?
The maximum drain-source voltage (VDS) is 80 V.
- What is the maximum drain current of the STP110N8F6?
The maximum drain current (ID) is 110 A.
- What is the typical on-resistance of the STP110N8F6?
The typical on-resistance (RDS(on)) is 0.0056 Ω.
- What is the maximum gate-source voltage of the STP110N8F6?
The maximum gate-source voltage (VGS) is 20 V.
- What is the gate threshold voltage range of the STP110N8F6?
The gate threshold voltage (VGS(th)) ranges from 2.5 V to 4.5 V.
- What is the total gate charge of the STP110N8F6?
The total gate charge (Qg) is 150 nC.
- What is the maximum power dissipation of the STP110N8F6?
The maximum power dissipation (PTOT) is 200 W.
- What is the maximum junction temperature of the STP110N8F6?
The maximum junction temperature (Tj) is 175 °C.
- In what package is the STP110N8F6 available?
The STP110N8F6 is available in a TO-220 package.
- What are the key applications of the STP110N8F6?
The STP110N8F6 is primarily used in switching applications such as power supplies and motor drives.
- What technology is used in the STP110N8F6?
The STP110N8F6 is developed using the STripFET™ F6 technology with a new trench gate structure.
