Overview
The STP100N8F6 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device is designed to offer very low on-resistance (RDS(on)) and low gate charge, making it highly efficient for various switching applications. The MOSFET is packaged in a TO-220 package, which is widely used in power electronics due to its robustness and ease of mounting.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STP100N8F6 | |
| Package | TO-220 | |
| VDS (Drain-Source Voltage) | 80 | V |
| VGS (Gate-Source Voltage) | ±20 | V |
| ID (Continuous Drain Current at TC = 25 °C) | 100 | A |
| ID (Continuous Drain Current at TC = 100 °C) | 70 | A |
| IDM (Pulsed Drain Current) | 400 | A |
| PTOT (Total Dissipation at TC = 25 °C) | 176 | W |
| TJ (Operating Junction Temperature Range) | -55 to 175 | °C |
| RDS(on) (Static Drain-Source On-State Resistance) | 0.009 | Ω |
| Qg (Total Gate Charge) | 100 | nC |
| VGS(th) (Gate Threshold Voltage) | 2 to 4 | V |
Key Features
- Very low on-resistance (RDS(on)) of 0.009 Ω typical
- Very low gate charge, reducing gate drive power loss
- High avalanche ruggedness, ensuring reliability under harsh conditions
- Low gate drive power loss, enhancing overall efficiency
- 100% avalanche tested for robust device performance and reliable operation
- Minimum lot-to-lot variations for consistent performance
Applications
The STP100N8F6 is primarily used in switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Industrial and automotive power electronics
Q & A
- What is the maximum drain-source voltage (VDS) of the STP100N8F6?
The maximum drain-source voltage (VDS) is 80 V.
- What is the continuous drain current (ID) at 25 °C for the STP100N8F6?
The continuous drain current (ID) at 25 °C is 100 A.
- What is the typical on-resistance (RDS(on)) of the STP100N8F6?
The typical on-resistance (RDS(on)) is 0.009 Ω.
- What is the maximum gate-source voltage (VGS) for the STP100N8F6?
The maximum gate-source voltage (VGS) is ±20 V.
- What is the operating junction temperature range (TJ) for the STP100N8F6?
The operating junction temperature range (TJ) is -55 to 175 °C.
- What are the key features of the STP100N8F6?
The key features include very low on-resistance, very low gate charge, high avalanche ruggedness, and low gate drive power loss.
- In what package is the STP100N8F6 available?
The STP100N8F6 is available in a TO-220 package.
- What are the typical applications of the STP100N8F6?
The typical applications include switching applications such as power supplies, motor control, and high-frequency switching circuits.
- What is the total dissipation (PTOT) at 25 °C for the STP100N8F6?
The total dissipation (PTOT) at 25 °C is 176 W.
- Is the STP100N8F6 100% avalanche tested?
Yes, the STP100N8F6 is 100% avalanche tested for robust device performance and reliable operation.
