STL6NM60N
  • Share:

STMicroelectronics STL6NM60N

Manufacturer No:
STL6NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5.75A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL6NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters, flyback converters, and LED lighting.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25 °C5.75A
Continuous Drain Current (ID) at TC = 100 °C3.6A
Pulsed Drain Current (IDM)23A
Total Dissipation at TC = 25 °C70W
Static Drain-Source On-Resistance (RDS(on))0.185Ω
Gate Threshold Voltage (VGS(th))3-5V
Input Capacitance (Ciss)1800pF
Output Capacitance (Coss)115pF
Reverse Transfer Capacitance (Crss)6pF

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Zener-protected
  • Ideal for high-efficiency converters, flyback converters, and LED lighting
  • Utilizes the second generation of MDmesh™ technology for low on-resistance and high efficiency

Applications

  • High-efficiency converters
  • Flyback converters
  • LED lighting
  • Switching applications requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-source voltage of the STL6NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current (ID) at 25 °C is 5.75 A.
  3. What is the typical static drain-source on-resistance?
    The typical static drain-source on-resistance (RDS(on)) is 0.185 Ω.
  4. What technology is used in the STL6NM60N?
    The STL6NM60N uses the second generation of MDmesh™ technology.
  5. Is the STL6NM60N suitable for high-efficiency converters?
    Yes, it is highly suitable for high-efficiency converters due to its low on-resistance and high efficiency.
  6. What are the typical applications of the STL6NM60N?
    Typical applications include flyback converters, LED lighting, and other switching applications requiring high efficiency.
  7. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is 3-5 V.
  8. What is the maximum gate-source voltage?
    The maximum gate-source voltage (VGS) is ±30 V.
  9. Is the STL6NM60N 100% avalanche tested?
    Yes, the STL6NM60N is 100% avalanche tested.
  10. What package type is the STL6NM60N available in?
    The STL6NM60N is available in the PowerFLAT™ 5x5 HV package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFLAT™ (5x5)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

-
497

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL6NM60N STL7NM60N STL26NM60N STL3NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.75A (Tc) 5.8A (Tc) 2.7A (Ta), 19A (Tc) 650mA (Ta), 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 920mOhm @ 2.3A, 10V 900mOhm @ 2.5A, 10V 185mOhm @ 10A, 10V 1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 14 nC @ 10 V 60 nC @ 10 V 9.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 50 V 363 pF @ 50 V 1800 pF @ 50 V 188 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 68W (Tc) 125mW (Ta), 3W (Tc) 2W (Ta), 22W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFLAT™ (5x5) 14-PowerFLAT™ (5x5) PowerFlat™ (8x8) HV PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT