STL6NM60N
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STMicroelectronics STL6NM60N

Manufacturer No:
STL6NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5.75A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL6NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is designed to offer high efficiency and low on-resistance, making it suitable for demanding applications such as high-efficiency converters, flyback converters, and LED lighting.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)600V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25 °C5.75A
Continuous Drain Current (ID) at TC = 100 °C3.6A
Pulsed Drain Current (IDM)23A
Total Dissipation at TC = 25 °C70W
Static Drain-Source On-Resistance (RDS(on))0.185Ω
Gate Threshold Voltage (VGS(th))3-5V
Input Capacitance (Ciss)1800pF
Output Capacitance (Coss)115pF
Reverse Transfer Capacitance (Crss)6pF

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Zener-protected
  • Ideal for high-efficiency converters, flyback converters, and LED lighting
  • Utilizes the second generation of MDmesh™ technology for low on-resistance and high efficiency

Applications

  • High-efficiency converters
  • Flyback converters
  • LED lighting
  • Switching applications requiring high efficiency and reliability

Q & A

  1. What is the maximum drain-source voltage of the STL6NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current (ID) at 25 °C is 5.75 A.
  3. What is the typical static drain-source on-resistance?
    The typical static drain-source on-resistance (RDS(on)) is 0.185 Ω.
  4. What technology is used in the STL6NM60N?
    The STL6NM60N uses the second generation of MDmesh™ technology.
  5. Is the STL6NM60N suitable for high-efficiency converters?
    Yes, it is highly suitable for high-efficiency converters due to its low on-resistance and high efficiency.
  6. What are the typical applications of the STL6NM60N?
    Typical applications include flyback converters, LED lighting, and other switching applications requiring high efficiency.
  7. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is 3-5 V.
  8. What is the maximum gate-source voltage?
    The maximum gate-source voltage (VGS) is ±30 V.
  9. Is the STL6NM60N 100% avalanche tested?
    Yes, the STL6NM60N is 100% avalanche tested.
  10. What package type is the STL6NM60N available in?
    The STL6NM60N is available in the PowerFLAT™ 5x5 HV package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFLAT™ (5x5)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL6NM60N STL7NM60N STL26NM60N STL3NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.75A (Tc) 5.8A (Tc) 2.7A (Ta), 19A (Tc) 650mA (Ta), 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 920mOhm @ 2.3A, 10V 900mOhm @ 2.5A, 10V 185mOhm @ 10A, 10V 1.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 14 nC @ 10 V 60 nC @ 10 V 9.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 50 V 363 pF @ 50 V 1800 pF @ 50 V 188 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 68W (Tc) 125mW (Ta), 3W (Tc) 2W (Ta), 22W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFLAT™ (5x5) 14-PowerFLAT™ (5x5) PowerFlat™ (8x8) HV PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN

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