Overview
The STL3NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh II technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for high-efficiency converters. The STL3NM60N is packaged in a PowerFLAT 3.3x3.3 HV package, which is designed to meet stringent environmental requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STL3NM60N | |
| Drain-Source Voltage (VDS) | 600 | V |
| Gate-Source Voltage (VGS) | ±25 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 2.2 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 1.7 | A |
| Pulsed Drain Current (IDM) | 2.6 | A |
| Static Drain-Source On-Resistance (RDS(on)) | 1.5 - 1.8 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Operating Junction Temperature Range (TJ) | -55 to 150 | °C |
| Thermal Resistance, Junction-to-Case (RthJC) | 5.6 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 62.5 | °C/W |
Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Vertical structure combined with strip layout for low on-resistance
- Suitable for high-efficiency converters due to its low RDS(on) and gate charge
Applications
The STL3NM60N is primarily used in switching applications, particularly in high-efficiency converters where low on-resistance and gate charge are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL3NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 2.2 A.
- What is the typical static drain-source on-resistance (RDS(on))?
The typical static drain-source on-resistance (RDS(on)) is 1.5 - 1.8 Ω.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2 - 4 V.
- What is the operating junction temperature range (TJ)?
The operating junction temperature range (TJ) is -55 to 150 °C.
- What package type is the STL3NM60N available in?
The STL3NM60N is available in a PowerFLAT 3.3x3.3 HV package.
- What are the key features of the STL3NM60N?
The key features include 100% avalanche testing, low input capacitance and gate charge, and low gate input resistance.
- What are the typical applications for the STL3NM60N?
The STL3NM60N is typically used in switching applications, especially in high-efficiency converters.
- What is the thermal resistance, junction-to-case (RthJC), of the STL3NM60N?
The thermal resistance, junction-to-case (RthJC), is 5.6 °C/W.
- What is the thermal resistance, junction-to-ambient (RthJA), of the STL3NM60N?
The thermal resistance, junction-to-ambient (RthJA), is 62.5 °C/W when mounted on a 1-inch² FR-4, 2 Oz copper board.
