STL7NM60N
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STMicroelectronics STL7NM60N

Manufacturer No:
STL7NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5.8A 14PWRFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STD7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This revolutionary device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. It is particularly suited for the most demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Gate-source voltage (VGS) ±25 V
Drain current (continuous) at TC = 25 °C (ID) 5 A
Drain current (continuous) at TC = 100 °C (ID) 3 A
Drain current pulsed (IDM) 20 A
Total power dissipation at TC = 25 °C (PTOT) 45 W
Operating junction temperature range (TJ) -55 to 150 °C
Thermal resistance, junction-to-case (RthJC) 2.78 °C/W
Thermal resistance, junction-to-ambient (RthJA) 50 °C/W
Static drain-source on resistance (RDS(on)) 800 - 900
Input capacitance (Ciss) 363 pF
Output capacitance (Coss) 24.6 pF
Reverse transfer capacitance (Crss) 1.1 pF
Total gate charge (Qg) 14 nC

Key Features

  • AEC-Q101 qualified
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

The STD7NM60N is suitable for various high-efficiency converter applications, including:

  • Switching applications
  • Industrial applications
  • Automotive applications
  • SMPS (Switch-Mode Power Supplies)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5 A.

  3. What is the thermal resistance, junction-to-case (RthJC), of the STD7NM60N?

    The thermal resistance, junction-to-case (RthJC), is 2.78 °C/W.

  4. Is the STD7NM60N AEC-Q101 qualified?

    Yes, the STD7NM60N is AEC-Q101 qualified.

  5. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 800 - 900 mΩ.

  6. What are the operating temperature ranges for the STD7NM60N?

    The operating junction temperature range is -55 to 150 °C.

  7. What is the total gate charge (Qg) of the STD7NM60N?

    The total gate charge (Qg) is 14 nC.

  8. What package type is the STD7NM60N available in?

    The STD7NM60N is available in a DPAK (TO-252) package.

  9. Is the STD7NM60N suitable for high-efficiency converters?

    Yes, the STD7NM60N is particularly suited for the most demanding high-efficiency converters.

  10. What are some common applications for the STD7NM60N?

    Common applications include switching applications, industrial and automotive applications, SMPS, data centers, and solar microinverters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:14-PowerFLAT™ (5x5)
Package / Case:14-PowerVQFN
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Similar Products

Part Number STL7NM60N STL3NM60N STL6NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 650mA (Ta), 2.2A (Tc) 5.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 1.8Ohm @ 1A, 10V 920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 9.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 188 pF @ 50 V 420 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 2W (Ta), 22W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 14-PowerFLAT™ (5x5) PowerFlat™ (3.3x3.3) PowerFLAT™ (5x5)
Package / Case 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN

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