STL7NM60N
  • Share:

STMicroelectronics STL7NM60N

Manufacturer No:
STL7NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5.8A 14PWRFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This revolutionary device combines a vertical structure with the company’s strip layout, resulting in one of the world’s lowest on-resistance and gate charge. It is particularly suited for the most demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 600 V
Gate-source voltage (VGS) ±25 V
Drain current (continuous) at TC = 25 °C (ID) 5 A
Drain current (continuous) at TC = 100 °C (ID) 3 A
Drain current pulsed (IDM) 20 A
Total power dissipation at TC = 25 °C (PTOT) 45 W
Operating junction temperature range (TJ) -55 to 150 °C
Thermal resistance, junction-to-case (RthJC) 2.78 °C/W
Thermal resistance, junction-to-ambient (RthJA) 50 °C/W
Static drain-source on resistance (RDS(on)) 800 - 900
Input capacitance (Ciss) 363 pF
Output capacitance (Coss) 24.6 pF
Reverse transfer capacitance (Crss) 1.1 pF
Total gate charge (Qg) 14 nC

Key Features

  • AEC-Q101 qualified
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications

The STD7NM60N is suitable for various high-efficiency converter applications, including:

  • Switching applications
  • Industrial applications
  • Automotive applications
  • SMPS (Switch-Mode Power Supplies)
  • Data centers
  • Solar microinverters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD7NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5 A.

  3. What is the thermal resistance, junction-to-case (RthJC), of the STD7NM60N?

    The thermal resistance, junction-to-case (RthJC), is 2.78 °C/W.

  4. Is the STD7NM60N AEC-Q101 qualified?

    Yes, the STD7NM60N is AEC-Q101 qualified.

  5. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 800 - 900 mΩ.

  6. What are the operating temperature ranges for the STD7NM60N?

    The operating junction temperature range is -55 to 150 °C.

  7. What is the total gate charge (Qg) of the STD7NM60N?

    The total gate charge (Qg) is 14 nC.

  8. What package type is the STD7NM60N available in?

    The STD7NM60N is available in a DPAK (TO-252) package.

  9. Is the STD7NM60N suitable for high-efficiency converters?

    Yes, the STD7NM60N is particularly suited for the most demanding high-efficiency converters.

  10. What are some common applications for the STD7NM60N?

    Common applications include switching applications, industrial and automotive applications, SMPS, data centers, and solar microinverters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:14-PowerFLAT™ (5x5)
Package / Case:14-PowerVQFN
0 Remaining View Similar

In Stock

-
130

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL7NM60N STL3NM60N STL6NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 650mA (Ta), 2.2A (Tc) 5.75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 1.8Ohm @ 1A, 10V 920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 9.5 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 188 pF @ 50 V 420 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 2W (Ta), 22W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 14-PowerFLAT™ (5x5) PowerFlat™ (3.3x3.3) PowerFLAT™ (5x5)
Package / Case 14-PowerVQFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32L475VGT6
STM32L475VGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L7824ACV
L7824ACV
STMicroelectronics
IC REG LINEAR 24V 1.5A TO220AB
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP