STL26NM60N
  • Share:

STMicroelectronics STL26NM60N

Manufacturer No:
STL26NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 19A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STL26NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device combines a vertical structure with STMicroelectronics’ well-known PowerMESH™ horizontal layout, resulting in one of the world’s lowest on-resistance and gate charge. This makes it particularly suitable for high-efficiency converters and demanding switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±25 V
Drain Current (ID) at TC = 25 °C 19 A
Drain Current (ID) at TC = 100 °C 12 A
On-State Resistance (RDS(on)) 0.160 Ω (typ.), 0.185 Ω (max.) Ω
Thermal Resistance Junction-Case (Rthj-case) 0.83 °C/W °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 45 °C/W °C/W
Maximum Junction Temperature (Tj) 150 °C
Total Gate Charge (Qg) 60 nC nC
Output Capacitance (Coss) 115 pF pF

Key Features

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely low on-resistance, unmatched among silicon-based Power MOSFETs
  • High power density and outstanding efficiency

Applications

The STL26NM60N is particularly suited for switching applications, including high-efficiency converters, due to its low on-resistance and gate charge. It is ideal for use in power management systems that require superior power density and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STL26NM60N?

    600 V

  2. What is the maximum continuous drain current at 25 °C?

    19 A

  3. What is the typical on-state resistance of the STL26NM60N?

    0.160 Ω

  4. What is the maximum gate-source voltage?

    ±25 V

  5. What is the thermal resistance junction-case of the STL26NM60N?

    0.83 °C/W

  6. What is the maximum junction temperature?

    150 °C

  7. What is the total gate charge of the STL26NM60N?

    60 nC

  8. What are the typical applications of the STL26NM60N?

    Switching applications, including high-efficiency converters.

  9. What technology is used in the STL26NM60N?

    Second generation of MDmesh™ technology combined with PowerMESH™ horizontal layout.

  10. What is the package type of the STL26NM60N?

    PowerFLAT™ 8x8 HV

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:185mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125mW (Ta), 3W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (8x8) HV
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

$3.85
236

Please send RFQ , we will respond immediately.

Similar Products

Part Number STL26NM60N STL6NM60N STL24NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 19A (Tc) 5.75A (Tc) 3.3A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 10A, 10V 920mOhm @ 2.3A, 10V 215mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 13 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V 420 pF @ 50 V 1400 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 125mW (Ta), 3W (Tc) 70W (Tc) 3W (Ta), 125W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (8x8) HV PowerFLAT™ (5x5) PowerFlat™ (8x8) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
TS921IDT
TS921IDT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT 8SOIC
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN