STL4N10F7
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STMicroelectronics STL4N10F7

Manufacturer No:
STL4N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 4.5/18A PWRFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL4N10F7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It utilizes the advanced STripFET™ F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, making it highly efficient for various power management applications. The MOSFET is packaged in a POWERFLAT package, which is ROHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

ParameterValueUnit
Drain-source voltage (Vds)100V
Drain current (Id)4.5A
On-state resistance (Rds(on))0.062Ω
Gate-source voltage (Vgs)±20V
Operating junction temperature (Tj)-55 to 150°C

Key Features

  • Low on-state resistance (Rds(on)) of 0.062 Ω, enhancing efficiency and reducing power losses.
  • High drain current capability of 4.5 A, suitable for demanding power applications.
  • Enhanced trench gate structure through STripFET™ F7 technology for improved performance.
  • POWERFLAT package for compact and efficient design.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The STL4N10F7 is suitable for a variety of power management applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • General-purpose power switching

Q & A

  1. What is the maximum drain-source voltage of the STL4N10F7?
    The maximum drain-source voltage (Vds) is 100 V.
  2. What is the typical on-state resistance of the STL4N10F7?
    The typical on-state resistance (Rds(on)) is 0.062 Ω.
  3. What is the maximum drain current of the STL4N10F7?
    The maximum drain current (Id) is 4.5 A.
  4. What package type is used for the STL4N10F7?
    The STL4N10F7 is packaged in a POWERFLAT package.
  5. Is the STL4N10F7 ROHS compliant?
    Yes, the STL4N10F7 is ROHS compliant.
  6. What is the operating junction temperature range of the STL4N10F7?
    The operating junction temperature range is -55 to 150 °C.
  7. What technology is used in the STL4N10F7?
    The STL4N10F7 uses STripFET™ F7 technology.
  8. What are some common applications of the STL4N10F7?
    Common applications include SMPS, DC-DC converters, motor control, PFC circuits, and general-purpose power switching.
  9. Where can I purchase the STL4N10F7?
    The STL4N10F7 can be purchased from various electronic component distributors such as Newark, Digi-Key, Mouser, and TME.
  10. What are the benefits of using the STL4N10F7 in power management applications?
    The benefits include low on-state resistance, high current capability, and compact design, leading to improved efficiency and reduced power losses.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:408 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.9W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL4N10F7 STL7N10F7 STL8N10F7 STL3N10F7 STL40N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 18A (Tc) 7A (Tj) 35A (Tc) 4A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2.25A, 10V 35mOhm @ 3.5A, 10V 20mOhm @ 4A, 10V 70mOhm @ 2A, 10V 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 14 nC @ 10 V 22 nC @ 10 V 7.8 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 408 pF @ 50 V 920 pF @ 50 V 2000 pF @ 50 V 408 pF @ 25 V 1270 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 2.9W (Ta), 50W (Tc) 2.9W (Ta), 50W (Tc) 3.5W (Ta), 50W (Tc) 2.4W (Tc) 5W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (2x2) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 6-PowerWDFN 8-PowerVDFN

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