STL40N10F7
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STMicroelectronics STL40N10F7

Manufacturer No:
STL40N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 40A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL40N10F7 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it ideal for various high-performance applications.

Key Specifications

Parameter Value Unit
Order Code STL40N10F7
VDS (Drain-source voltage) 100 V
VGS (Gate-source voltage) ±20 V
ID (Continuous drain current at TC = 25 °C) 10 A
ID (Continuous drain current at Tpcb = 25 °C) 10 A
IDM (Pulsed drain current) 40 A
PTOT (Total power dissipation at TC = 25 °C) 70 W
PTOT (Total power dissipation at Tpcb = 25 °C) 5 W
Tj (Operating junction temperature range) -55 to 175 °C
Tstg (Storage temperature range) -55 to 175 °C
RDS(on) max. 0.024 Ω Ω
Rthj-case (Thermal resistance junction-case) 2.08 °C/W
Rthj-pcb (Thermal resistance junction-pcb) 31 °C/W

Key Features

  • Among the lowest RDS(on) on the market, with a typical value of 0.024 Ω.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness.
  • Reduced internal capacitance and gate charge for faster switching.

Applications

The STL40N10F7 is primarily used in switching applications due to its high efficiency, low on-state resistance, and fast switching capabilities. These applications include but are not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STL40N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) of the STL40N10F7?

    The typical on-state resistance (RDS(on)) is 0.024 Ω.

  3. What is the maximum continuous drain current (ID) at TC = 25 °C?

    The maximum continuous drain current (ID) at TC = 25 °C is 10 A.

  4. What is the total power dissipation at TC = 25 °C?

    The total power dissipation at TC = 25 °C is 70 W.

  5. What is the operating junction temperature range (Tj) of the STL40N10F7?

    The operating junction temperature range (Tj) is -55 to 175 °C.

  6. What technology is used in the STL40N10F7?

    The STL40N10F7 uses STripFET F7 technology with an enhanced trench gate structure.

  7. What is the package type of the STL40N10F7?

    The STL40N10F7 is packaged in a PowerFLAT 5x6 package.

  8. What are the key features of the STL40N10F7?

    The key features include among the lowest RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.

  9. In what types of applications is the STL40N10F7 typically used?

    The STL40N10F7 is typically used in switching applications such as power supplies, motor control, and high-frequency switching circuits.

  10. What is the thermal resistance junction-case (Rthj-case) of the STL40N10F7?

    The thermal resistance junction-case (Rthj-case) is 2.08 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL40N10F7 STL60N10F7 STL90N10F7 STL4N10F7 STL30N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 46A (Tc) 70A (Tc) 4.5A (Ta), 18A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 10A, 10V 18mOhm @ 6A, 10V 10.5mOhm @ 8A, 10V 70mOhm @ 2.25A, 10V 35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 25 nC @ 10 V 39 nC @ 10 V 7.8 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V 20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1270 pF @ 50 V 1640 pF @ 50 V 3550 pF @ 50 V 408 pF @ 50 V 920 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 5W (Ta), 70W (Tc) 5W (Ta), 72W (Tc) 5W (Ta), 100W (Tc) 2.9W (Ta), 50W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (3.3x3.3) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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