STL90N10F7
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STMicroelectronics STL90N10F7

Manufacturer No:
STL90N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 70A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL90N10F7 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device utilizes the advanced STripFET F7 technology, which features an enhanced trench gate structure. This design results in very low on-state resistance, reduced internal capacitance, and lower gate charge, enabling faster and more efficient switching operations.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
On-State Resistance (Rds(on))7 mΩ (typical)
Continuous Drain Current (Id)70 A
Power Dissipation (Pd)100 W
PackageTO-247 or other compatible packages

Key Features

  • Very low on-state resistance (Rds(on)) of 7 mΩ (typical), among the lowest in its class.
  • Enhanced trench gate structure using STripFET F7 technology.
  • Reduced internal capacitance and gate charge for faster switching.
  • High continuous drain current of 70 A.
  • High power dissipation capability of 100 W.

Applications

The STL90N10F7 is suitable for a variety of high-power applications, including but not limited to:

  • Switch-mode power supplies (SMPS).
  • DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the voltage rating of the STL90N10F7?
    The STL90N10F7 has a voltage rating of 100 V.
  2. What is the typical on-state resistance of the STL90N10F7?
    The typical on-state resistance (Rds(on)) is 7 mΩ.
  3. What is the continuous drain current of the STL90N10F7?
    The continuous drain current (Id) is 70 A.
  4. What technology does the STL90N10F7 use?
    The STL90N10F7 uses STripFET F7 technology.
  5. What are the benefits of the enhanced trench gate structure in the STL90N10F7?
    The enhanced trench gate structure reduces internal capacitance and gate charge, enabling faster and more efficient switching.
  6. What are some common applications for the STL90N10F7?
    Common applications include switch-mode power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and power factor correction circuits.
  7. What is the power dissipation capability of the STL90N10F7?
    The power dissipation capability is 100 W.
  8. What package types are available for the STL90N10F7?
    The STL90N10F7 is available in TO-247 and other compatible packages.
  9. Why is the STL90N10F7 considered high-performance?
    The STL90N10F7 is considered high-performance due to its very low on-state resistance, reduced internal capacitance, and high continuous drain current.
  10. Where can I find detailed specifications for the STL90N10F7?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 100W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL90N10F7 STL30N10F7 STL40N10F7 STL60N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 30A (Tc) 40A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 8A, 10V 35mOhm @ 4A, 10V 24mOhm @ 10A, 10V 18mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 14 nC @ 10 V 19 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V 20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 920 pF @ 50 V 1270 pF @ 50 V 1640 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 5W (Ta), 100W (Tc) 75W (Tc) 5W (Ta), 70W (Tc) 5W (Ta), 72W (Tc)
Operating Temperature 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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