Overview
The STL30N10F7 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the 7th generation of STripFET F7 technology with an enhanced trench gate structure. This device is designed to offer very low on-state resistance, reduced internal capacitance, and lower gate charge, making it ideal for faster and more efficient switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 8 | A |
| Continuous Drain Current (ID) at Tpcb = 100 °C | 5.2 | A |
| Pulsed Drain Current (IDM) | 120 | A |
| Total Power Dissipation (PTOT) at TC = 25 °C | 4.8 | W |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 4 A | 0.027 | Ω |
| Gate Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
| Thermal Resistance Junction-Pcb (Rthj-pcb) | 31.3 | °C/W |
| Storage Temperature Range | -55 to 175 | °C |
Key Features
- Among the lowest RDS(on) on the market, with a typical value of 0.027 Ω at VGS = 10 V and ID = 4 A.
- Excellent figure of merit (FoM) for high efficiency.
- Low Crss/Ciss ratio for improved EMI immunity.
- High avalanche ruggedness.
- Enhanced trench gate structure for reduced internal capacitance and gate charge.
Applications
The STL30N10F7 is suitable for various switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Automotive systems (though specific automotive-grade versions are available).
- Industrial power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL30N10F7?
The maximum drain-source voltage (VDS) is 100 V. - What is the typical on-state resistance (RDS(on)) of the STL30N10F7?
The typical on-state resistance (RDS(on)) is 0.027 Ω at VGS = 10 V and ID = 4 A. - What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 8 A. - What is the thermal resistance junction-pcb (Rthj-pcb) of the STL30N10F7?
The thermal resistance junction-pcb (Rthj-pcb) is 31.3 °C/W. - What is the storage temperature range for the STL30N10F7?
The storage temperature range is -55 to 175 °C. - What technology is used in the STL30N10F7?
The STL30N10F7 uses the 7th generation of STripFET F7 technology with an enhanced trench gate structure. - What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V. - What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 120 A. - What package type is the STL30N10F7 available in?
The STL30N10F7 is available in a PowerFLAT 5x6 package. - What are some common applications for the STL30N10F7?
Common applications include power supplies, DC-DC converters, motor control, and industrial power management systems.
