STL60N10F7
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STMicroelectronics STL60N10F7

Manufacturer No:
STL60N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 46A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL60N10F7 is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device features an enhanced trench gate structure, which significantly reduces on-state resistance. It is designed to operate at high efficiency and reliability, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
On-State Resistance (Rds(on))14.5 mΩ (typ.)
Continuous Drain Current (Id)12 A
PackagePowerFLAT 5x6
TechnologySTripFET F7 DeepGATE

Key Features

  • Low on-state resistance (Rds(on)) of 14.5 mΩ (typ.) for high efficiency.
  • High continuous drain current (Id) of 12 A.
  • Enhanced trench gate structure using STripFET F7 technology.
  • Compact PowerFLAT 5x6 package for space-saving designs.
  • High voltage rating of 100 V, suitable for various power management applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems (where applicable with automotive-grade versions).
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the voltage rating of the STL60N10F7?
    The voltage rating (Vds) of the STL60N10F7 is 100 V.
  2. What is the typical on-state resistance of the STL60N10F7?
    The typical on-state resistance (Rds(on)) is 14.5 mΩ.
  3. What is the continuous drain current of the STL60N10F7?
    The continuous drain current (Id) is 12 A.
  4. What technology is used in the STL60N10F7?
    The STL60N10F7 uses STripFET F7 DeepGATE technology.
  5. In what package is the STL60N10F7 available?
    The STL60N10F7 is available in a PowerFLAT 5x6 package.
  6. What are some common applications for the STL60N10F7?
    Common applications include power supplies, motor control systems, industrial automation, and consumer electronics requiring high power efficiency.
  7. Is the STL60N10F7 suitable for automotive applications?
    While the STL60N10F7 itself is not specifically automotive-grade, STMicroelectronics offers other versions of STripFET F7 MOSFETs that are automotive-grade.
  8. What are the benefits of using STripFET F7 technology?
    The benefits include low on-state resistance, high efficiency, and compact packaging.
  9. How does the enhanced trench gate structure improve performance?
    The enhanced trench gate structure reduces on-state resistance, leading to higher efficiency and lower power losses.
  10. Where can I find detailed specifications for the STL60N10F7?
    Detailed specifications can be found on the official STMicroelectronics website, as well as through distributors like Farnell and other electronic component suppliers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL60N10F7 STL90N10F7 STL30N10F7 STL40N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 70A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 6A, 10V 10.5mOhm @ 8A, 10V 35mOhm @ 4A, 10V 24mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 39 nC @ 10 V 14 nC @ 10 V 19 nC @ 10 V
Vgs (Max) 20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 50 V 3550 pF @ 50 V 920 pF @ 50 V 1270 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 5W (Ta), 72W (Tc) 5W (Ta), 100W (Tc) 75W (Tc) 5W (Ta), 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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