STL3N10F7
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STMicroelectronics STL3N10F7

Manufacturer No:
STL3N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 4A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL3N10F7 is a high-performance N-channel power MOSFET from STMicroelectronics, utilizing the 7th generation of ST's proprietary STripFET™ F7 technology. This device is designed to offer superior efficiency and reliability in various power management applications. The STL3N10F7 features a new gate structure and is part of the DeepGATE™ series, enhancing its switching characteristics and thermal performance.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 100 V
RDS(on) (On-State Resistance) 0.062 Ω (typ.)
ID (Drain Current) 4 A
Package PowerFLAT 2x2
Technology STripFET F7

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 0.062 Ω (typ.)
  • Enhanced switching performance with the 7th generation STripFET F7 technology
  • New gate structure for improved thermal and electrical characteristics
  • Compact PowerFLAT 2x2 package for space-saving designs
  • DeepGATE™ technology for better reliability and performance

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Automotive systems (e.g., battery management, power steering)
  • Industrial power management and control systems
  • Consumer electronics requiring high-efficiency power switching

Q & A

  1. What is the maximum drain-source voltage of the STL3N10F7?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the typical on-state resistance of the STL3N10F7?

    The typical on-state resistance (RDS(on)) is 0.062 Ω.

  3. What is the maximum drain current of the STL3N10F7?

    The maximum drain current (ID) is 4 A.

  4. In what package is the STL3N10F7 available?

    The STL3N10F7 is available in a PowerFLAT 2x2 package.

  5. What technology is used in the STL3N10F7?

    The STL3N10F7 uses STMicroelectronics' 7th generation STripFET F7 technology.

  6. What are some typical applications for the STL3N10F7?

    Typical applications include power supplies, DC-DC converters, motor control, automotive systems, and industrial power management.

  7. What is the DeepGATE™ technology in the STL3N10F7?

    The DeepGATE™ technology enhances the switching performance and thermal characteristics of the MOSFET.

  8. Is the STL3N10F7 suitable for automotive applications?

    Yes, the STL3N10F7 can be used in automotive systems due to its high reliability and performance.

  9. What are the benefits of using the STL3N10F7 in power supplies?

    The STL3N10F7 offers high efficiency, low on-state resistance, and enhanced switching performance, making it ideal for power supply applications.

  10. Where can I find detailed specifications and datasheets for the STL3N10F7?

    Detailed specifications and datasheets can be found on STMicroelectronics' official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:408 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (2x2)
Package / Case:6-PowerWDFN
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Similar Products

Part Number STL3N10F7 STL7N10F7 STL8N10F7 STL4N10F7 STL30N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 7A (Tj) 35A (Tc) 4.5A (Ta), 18A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 10V 35mOhm @ 3.5A, 10V 20mOhm @ 4A, 10V 70mOhm @ 2.25A, 10V 35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 14 nC @ 10 V 22 nC @ 10 V 7.8 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 408 pF @ 25 V 920 pF @ 50 V 2000 pF @ 50 V 408 pF @ 50 V 920 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 2.4W (Tc) 2.9W (Ta), 50W (Tc) 3.5W (Ta), 50W (Tc) 2.9W (Ta), 50W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (2x2) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3) PowerFlat™ (5x6)
Package / Case 6-PowerWDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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