STL8N10F7
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STMicroelectronics STL8N10F7

Manufacturer No:
STL8N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL8N10F7 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device utilizes the advanced STripFET™ F7 technology, which features an enhanced trench-gate structure. This design results in very low on-state resistance and improved switching efficiency, making it ideal for a variety of power management applications.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)100V
VGS (Gate-Source Voltage)±20V
RDS(on) (On-State Resistance)Typically 1.5 mΩ
ID (Continuous Drain Current)120A
Ptot (Total Power Dissipation)Dependent on package and thermal conditionsW
TJ (Junction Temperature)-55 to 150°C

Key Features

  • Enhanced trench-gate structure using STripFET™ F7 technology for low on-state resistance and fast switching.
  • High avalanche ruggedness, ensuring reliability in demanding applications.
  • Low thermal resistance, enhancing heat dissipation and overall device performance.
  • Compliant with RoHS and halogen-free, making it environmentally friendly.

Applications

The STL8N10F7 is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Automotive systems, such as battery management and power steering.
  • Industrial control and automation.
  • Renewable energy systems, such as solar and wind power.

Q & A

  1. What is the STL8N10F7?
    The STL8N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ F7 technology.
  2. What are the key benefits of the STripFET™ F7 technology?
    The STripFET™ F7 technology offers very low on-state resistance and faster switching, which simplifies designs and reduces power losses.
  3. What is the maximum drain-source voltage (VDS) of the STL8N10F7?
    The maximum drain-source voltage (VDS) is 100 V.
  4. What is the typical on-state resistance (RDS(on)) of the STL8N10F7?
    The typical on-state resistance (RDS(on)) is 1.5 mΩ.
  5. What are the operating temperature ranges for the STL8N10F7?
    The junction temperature (TJ) range is from -55°C to 150°C.
  6. Is the STL8N10F7 environmentally friendly?
    Yes, the STL8N10F7 is RoHS compliant and halogen-free.
  7. What are some common applications for the STL8N10F7?
    Common applications include power supplies, motor control, automotive systems, industrial control, and renewable energy systems.
  8. How does the STL8N10F7 handle high current and high voltage conditions?
    The device is designed with high avalanche ruggedness and low thermal resistance, ensuring reliability in high current and high voltage conditions.
  9. Where can I find detailed specifications for the STL8N10F7?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser and TME.
  10. Is the STL8N10F7 suitable for use in automotive applications?
    Yes, the STL8N10F7 is suitable for use in automotive applications due to its robust design and compliance with automotive standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (3.3x3.3)
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL8N10F7 STL3N10F7 STL4N10F7 STL7N10F7
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 4A (Tc) 4.5A (Ta), 18A (Tc) 7A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 4A, 10V 70mOhm @ 2A, 10V 70mOhm @ 2.25A, 10V 35mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 7.8 nC @ 10 V 7.8 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V 408 pF @ 25 V 408 pF @ 50 V 920 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 3.5W (Ta), 50W (Tc) 2.4W (Tc) 2.9W (Ta), 50W (Tc) 2.9W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (3.3x3.3) PowerFlat™ (2x2) PowerFlat™ (3.3x3.3) PowerFlat™ (3.3x3.3)
Package / Case 8-PowerVDFN 6-PowerWDFN 8-PowerVDFN 8-PowerVDFN

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