STB120NF10T4
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STMicroelectronics STB120NF10T4

Manufacturer No:
STB120NF10T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 110A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB120NF10T4 is a high-performance N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET™ II series, which is designed to minimize on-resistance, making it highly efficient for various power management applications. This MOSFET is packaged in a 3-pin D2PAK configuration, offering a balance between high current handling and thermal performance.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)120 A
RDS(on) (On-Resistance)0.009 Ω
PD (Power Dissipation)Dependent on package and thermal conditions
Package3-pin D2PAK
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(on)) of 0.009 Ω, enhancing efficiency and reducing power losses.
  • High continuous drain current (ID) of 120 A, suitable for high-power applications.
  • High drain-source voltage (VDS) of 100 V, providing robust voltage handling.
  • STripFET™ II technology for improved performance and reliability.
  • Compact 3-pin D2PAK package for efficient thermal management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management.
  • Automotive systems requiring high reliability and efficiency.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum continuous drain current of the STB120NF10T4?
    The maximum continuous drain current is 120 A.
  2. What is the typical on-resistance of the STB120NF10T4?
    The typical on-resistance is 0.009 Ω.
  3. In what package is the STB120NF10T4 available?
    The STB120NF10T4 is available in a 3-pin D2PAK package.
  4. What is the maximum drain-source voltage of the STB120NF10T4?
    The maximum drain-source voltage is 100 V.
  5. What technology is used in the STB120NF10T4?
    The STB120NF10T4 uses STMicroelectronics' STripFET™ II technology.
  6. What are some common applications for the STB120NF10T4?
    Common applications include power supplies, motor control systems, industrial power management, automotive systems, and renewable energy systems.
  7. What is the operating temperature range of the STB120NF10T4?
    The operating temperature range is -55°C to 150°C.
  8. Where can I find detailed specifications for the STB120NF10T4?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and RS Components.
  9. Is the STB120NF10T4 suitable for high-power applications?
    Yes, the STB120NF10T4 is designed for high-power applications due to its high current and voltage ratings.
  10. What are the benefits of using the STripFET™ II technology in the STB120NF10T4?
    The STripFET™ II technology provides low on-resistance, high efficiency, and improved reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:233 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):312W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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