STW120NF10
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STMicroelectronics STW120NF10

Manufacturer No:
STW120NF10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW120NF10 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications where low gate charge driving requirements are critical.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 110 A
Continuous Drain Current (ID) at TC = 100 °C 77 A
Pulsed Drain Current (IDM) 440 A
Total Dissipation at TC = 25 °C (PTOT) 312 W
Static Drain-Source On-Resistance (RDS(on)) 9.0 - 10.5
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature Range (Tj) -55 to 175 °C
Storage Temperature Range (Tstg) -55 to 150 °C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • High efficiency due to low on-resistance (RDS(on))
  • Suitable for high-frequency switching applications
  • Available in D²PAK, TO-220, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom and computer applications
  • Industrial and automotive applications requiring high power and efficiency
  • Switching applications with low gate charge driving requirements

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW120NF10?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) at 25 °C for the STW120NF10?

    The continuous drain current (ID) at 25 °C is 110 A.

  3. What is the typical static drain-source on-resistance (RDS(on)) of the STW120NF10?

    The typical static drain-source on-resistance (RDS(on)) is 9.0 mΩ.

  4. What are the available packages for the STW120NF10?

    The STW120NF10 is available in D²PAK, TO-220, and TO-247 packages.

  5. What is the operating junction temperature range for the STW120NF10?

    The operating junction temperature range is -55 to 175 °C.

  6. Is the STW120NF10 suitable for high-frequency switching applications?

    Yes, the STW120NF10 is suitable for high-frequency switching applications due to its low gate charge and high efficiency.

  7. What is the maximum pulsed drain current (IDM) for the STW120NF10?

    The maximum pulsed drain current (IDM) is 440 A.

  8. Is the STW120NF10 environmentally compliant?

    Yes, the STW120NF10 is available in ECOPACK® compliant packages, ensuring environmental sustainability.

  9. What are some typical applications of the STW120NF10?

    Typical applications include advanced high-efficiency isolated DC-DC converters, telecom and computer applications, and industrial and automotive applications.

  10. What is the gate threshold voltage (VGS(th)) range for the STW120NF10?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:233 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):312W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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