STW120NF10
  • Share:

STMicroelectronics STW120NF10

Manufacturer No:
STW120NF10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 110A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW120NF10 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications where low gate charge driving requirements are critical.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 110 A
Continuous Drain Current (ID) at TC = 100 °C 77 A
Pulsed Drain Current (IDM) 440 A
Total Dissipation at TC = 25 °C (PTOT) 312 W
Static Drain-Source On-Resistance (RDS(on)) 9.0 - 10.5
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature Range (Tj) -55 to 175 °C
Storage Temperature Range (Tstg) -55 to 150 °C

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • High efficiency due to low on-resistance (RDS(on))
  • Suitable for high-frequency switching applications
  • Available in D²PAK, TO-220, and TO-247 packages
  • ECOPACK® compliant for environmental sustainability

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom and computer applications
  • Industrial and automotive applications requiring high power and efficiency
  • Switching applications with low gate charge driving requirements

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW120NF10?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) at 25 °C for the STW120NF10?

    The continuous drain current (ID) at 25 °C is 110 A.

  3. What is the typical static drain-source on-resistance (RDS(on)) of the STW120NF10?

    The typical static drain-source on-resistance (RDS(on)) is 9.0 mΩ.

  4. What are the available packages for the STW120NF10?

    The STW120NF10 is available in D²PAK, TO-220, and TO-247 packages.

  5. What is the operating junction temperature range for the STW120NF10?

    The operating junction temperature range is -55 to 175 °C.

  6. Is the STW120NF10 suitable for high-frequency switching applications?

    Yes, the STW120NF10 is suitable for high-frequency switching applications due to its low gate charge and high efficiency.

  7. What is the maximum pulsed drain current (IDM) for the STW120NF10?

    The maximum pulsed drain current (IDM) is 440 A.

  8. Is the STW120NF10 environmentally compliant?

    Yes, the STW120NF10 is available in ECOPACK® compliant packages, ensuring environmental sustainability.

  9. What are some typical applications of the STW120NF10?

    Typical applications include advanced high-efficiency isolated DC-DC converters, telecom and computer applications, and industrial and automotive applications.

  10. What is the gate threshold voltage (VGS(th)) range for the STW120NF10?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:233 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):312W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$6.18
75

Please send RFQ , we will respond immediately.

Same Series
STF120NF10
STF120NF10
MOSFET N-CH 100V 41A TO220FP
STB120NF10T4
STB120NF10T4
MOSFET N-CH 100V 110A D2PAK
STW120NF10
STW120NF10
MOSFET N-CH 100V 110A TO247-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
STM32F103VFT7
STM32F103VFT7
STMicroelectronics
IC MCU 32BIT 768KB FLASH 100LQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
STR912FAW46X6T
STR912FAW46X6T
STMicroelectronics
IC MCU 32BIT 1MB FLASH 128LQFP
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK