Overview
The STP120NF10 is a medium-voltage N-channel power MOSFET developed by STMicroelectronics using their unique STripFET™ II process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for high-efficiency applications. The STP120NF10 is available in the TO-220 package and is part of a broader portfolio of power MOSFETs ranging from 30 V to 350 V, catering to various industrial and automotive needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 110 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 77 | A |
| Pulsed Drain Current (IDM) | 440 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 312 | W |
| Peak Diode Recovery Voltage Slope (dv/dt) | 10 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 550 | mJ |
| Operating Junction Temperature Range (Tj) | -55 to 175 | °C |
| Static Drain-Source On-Resistance (RDS(on)) | 9.0 - 10.5 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Total Gate Charge (Qg) | 172 - 233 | nC |
Key Features
- Exceptional dv/dt Capability: The STP120NF10 exhibits high robustness against voltage spikes and fast switching times, making it suitable for demanding applications.
- 100% Avalanche Tested: Ensures reliability and durability under extreme conditions.
- Low Gate Charge: Minimized input capacitance and gate charge reduce the driving requirements, enhancing efficiency in high-frequency applications.
- High Continuous Drain Current: Supports up to 110 A at 25 °C, making it suitable for high-power applications.
- ECOPACK® Packages: Available in environmentally compliant packages, meeting various ecological standards.
Applications
- Switching Applications: Ideal for use as primary switches in advanced high-efficiency isolated DC-DC converters.
- Telecom and Computer Applications: Suitable for applications requiring low gate charge driving and high efficiency.
- Industrial and Automotive Applications: Part of a broader portfolio catering to various industrial and automotive needs.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP120NF10?
100 V.
- What is the continuous drain current (ID) at 25 °C?
110 A.
- What is the typical static drain-source on-resistance (RDS(on))?
9.0 mΩ.
- What is the gate threshold voltage (VGS(th)) range?
2 - 4 V.
- What is the total gate charge (Qg) range?
172 - 233 nC.
- What are the typical applications of the STP120NF10?
Switching applications, telecom and computer applications, and industrial and automotive applications).
- What is the operating junction temperature range (Tj) of the STP120NF10?
-55 to 175 °C).
- What is the peak diode recovery voltage slope (dv/dt)?
10 V/ns).
- Is the STP120NF10 100% avalanche tested?
- In what package is the STP120NF10 available?
TO-220 package).
