SVD5867NLT4G
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onsemi SVD5867NLT4G

Manufacturer No:
SVD5867NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 22A DPAK-3
Delivery:
Payment:
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Product Introduction

Overview

The SVD5867NLT4G is a high-performance N-Channel Power MOSFET manufactured by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a surface mount DPAK-3 package, making it suitable for a variety of power management and switching applications. The MOSFET is qualified to AEC-Q101 standards, ensuring reliability and performance in automotive and industrial environments.

Key Specifications

ParameterValue
Channel ModeEnhancement
Maximum Operating Voltage60 V
Maximum Continuous Drain Current (Tc)22 A
Maximum Power Dissipation (Tc)43 W
Maximum Power Dissipation (Ta)3.3 W
Maximum Operating Temperature+175°C
Package TypeSurface Mount DPAK-3
QualificationAEC-Q101

Key Features

  • Low on-resistance for efficient power handling
  • High current capability of up to 22 A (Tc)
  • Surface mount DPAK-3 package for compact design
  • AEC-Q101 qualified for reliability in automotive and industrial applications
  • High maximum operating temperature of +175°C

Applications

The SVD5867NLT4G is suitable for a wide range of applications, including:

  • Automotive systems such as power steering, braking, and fuel injection
  • Industrial power supplies and motor control
  • Switch mode power supplies
  • DC-DC converters
  • General-purpose power switching

Q & A

  1. What is the maximum operating voltage of the SVD5867NLT4G?
    The maximum operating voltage is 60 V.
  2. What is the maximum continuous drain current of the SVD5867NLT4G?
    The maximum continuous drain current is 22 A (Tc).
  3. What is the package type of the SVD5867NLT4G?
    The package type is surface mount DPAK-3.
  4. Is the SVD5867NLT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  5. What is the maximum power dissipation at Tc?
    The maximum power dissipation at Tc is 43 W.
  6. What is the maximum operating temperature of the SVD5867NLT4G?
    The maximum operating temperature is +175°C.
  7. What are some common applications for the SVD5867NLT4G?
    Common applications include automotive systems, industrial power supplies, switch mode power supplies, DC-DC converters, and general-purpose power switching.
  8. What is the significance of the AEC-Q101 qualification?
    The AEC-Q101 qualification ensures the device meets stringent automotive standards for reliability and performance.
  9. How does the surface mount DPAK-3 package benefit the design?
    The surface mount DPAK-3 package allows for compact design and easy integration into various systems.
  10. What is the on-resistance of the SVD5867NLT4G?
    While the exact on-resistance value is not specified here, it is known for its low on-resistance which is crucial for efficient power handling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
SVD5867NLT4G
SVD5867NLT4G
MOSFET N-CH 60V 22A DPAK-3
NVD5867NLT4G-TB01
NVD5867NLT4G-TB01
MOSFET N-CH 60V 6A/22A DPAK-3

Similar Products

Part Number SVD5867NLT4G SVD5865NLT4G
Manufacturer onsemi onsemi
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 10A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 11A, 10V 16mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 25 V 1400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.3W (Ta), 43W (Tc) 3.1W (Ta), 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK-3 DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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