Overview
The NVTFS5116PLTAG is a power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This single P-channel MOSFET features a compact WDFN8 package with dimensions of 3.3 x 3.3 mm, making it ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Tmb = 25°C) | ID | -14 | A |
| Continuous Drain Current (Tmb = 100°C) | ID | -10 | A |
| Power Dissipation (Tmb = 25°C) | PD | 21 | W |
| Power Dissipation (Tmb = 100°C) | PD | 10 | W |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -7 A) | RDS(on) | 37 - 52 | mΩ |
| Gate Threshold Voltage | VGS(TH) | -1 to -3 | V |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Turn-On Delay Time | td(on) | 14 | ns |
| Turn-Off Delay Time | td(off) | 24 | ns |
Key Features
- Compact Design: Small footprint of 3.3 x 3.3 mm in WDFN8 package, ideal for space-constrained applications.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 37 mΩ at VGS = -10 V and ID = -7 A.
- Low Capacitance: Reduces driver losses with input capacitance of 1258 pF and output capacitance of 127 pF.
- Wettable Flanks: Available in versions with wettable flanks for improved solder joint inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial applications.
- Pb-Free and RoHS Compliant: Meets environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Power Management: Used in power management circuits, motor control, and power supplies.
- Consumer Electronics: Ideal for battery management, DC-DC converters, and other high-current applications.
- Rename and Replace: Can be used as a replacement or upgrade in existing designs requiring improved performance and efficiency.
Q & A
- What is the maximum drain-to-source voltage of the NVTFS5116PLTAG?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating at Tmb = 25°C?
The continuous drain current rating at Tmb = 25°C is -14 A.
- What is the typical on-resistance of the NVTFS5116PLTAG?
The typical on-resistance (RDS(on)) is 37 to 52 mΩ at VGS = -10 V and ID = -7 A.
- Is the NVTFS5116PLTAG Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175°C.
- What are the turn-on and turn-off delay times?
The turn-on delay time (td(on)) is 14 ns, and the turn-off delay time (td(off)) is 24 ns.
- Is the NVTFS5116PLTAG AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the input capacitance of the NVTFS5116PLTAG?
The input capacitance (Ciss) is 1258 pF at VGS = 0 V and f = 1.0 MHz.
- What are the typical applications of the NVTFS5116PLTAG?
Typical applications include automotive systems, industrial power management, consumer electronics, and power supplies.
- What is the package type of the NVTFS5116PLTAG?
The package type is WDFN8 with dimensions of 3.3 x 3.3 mm.
