NVTFS5116PLWFTAG
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onsemi NVTFS5116PLWFTAG

Manufacturer No:
NVTFS5116PLWFTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 6A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS5116PLWFTAG is a single P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. It features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. The NVTFS5116PLWFTAG is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (Tmb = 25°C)ID-14A
Continuous Drain Current (Tmb = 100°C)ID-10A
Power Dissipation (Tmb = 25°C)PD21W
Power Dissipation (Tmb = 100°C)PD10W
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175°C
Drain-to-Source On Resistance (VGS = -10 V, ID = -7 A)RDS(on)52 mΩ
Input CapacitanceCiss1258 pF
Output CapacitanceCoss127 pF
Reverse Transfer CapacitanceCrss84 pF

Key Features

  • Small Footprint: 3.3 x 3.3 mm for compact design.
  • Low RDS(on): Minimizes conduction losses.
  • Low Capacitance: Minimizes driver losses.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
  • Pb-Free and RoHS Compliant: Aligns with environmental regulations.
  • Wettable Flanks: Enhances inspection and reliability in soldering processes.

Applications

The NVTFS5116PLWFTAG is suitable for various high-performance applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
  • Power Management: Used in DC-DC converters, power supplies, and other power management circuits.
  • Industrial Control: Suitable for industrial control systems, motor control, and power switching applications.
  • Consumer Electronics: Can be used in high-power consumer electronics such as power adapters and battery chargers.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5116PLWFTAG?
    The maximum drain-to-source voltage is -60 V.
  2. What is the continuous drain current at Tmb = 25°C?
    The continuous drain current at Tmb = 25°C is -14 A.
  3. Is the NVTFS5116PLWFTAG AEC-Q101 qualified?
    Yes, the NVTFS5116PLWFTAG is AEC-Q101 qualified.
  4. What is the typical on-resistance of the NVTFS5116PLWFTAG?
    The typical on-resistance is 52 mΩ at VGS = -10 V and ID = -7 A.
  5. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55 to +175 °C.
  6. Is the NVTFS5116PLWFTAG Pb-free and RoHS compliant?
    Yes, the NVTFS5116PLWFTAG is Pb-free and RoHS compliant.
  7. What is the input capacitance of the NVTFS5116PLWFTAG?
    The input capacitance is 1258 pF.
  8. What are the typical switching times for the NVTFS5116PLWFTAG?
    The turn-on delay time is 14 ns, rise time is 68 ns, turn-off delay time is 24 ns, and fall time is 36 ns.
  9. What is the maximum power dissipation at Tmb = 25°C?
    The maximum power dissipation at Tmb = 25°C is 21 W.
  10. What is the package type of the NVTFS5116PLWFTAG?
    The package type is WDFN8 with dimensions 3.3 x 3.3 mm.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1258 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 21W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS5116PLWFTAG NVTFS5116PLWFTWG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 7A, 10V 52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 25 V 1258 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 21W (Tc) 3.2W (Ta), 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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