NVTFS5116PLTWG
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onsemi NVTFS5116PLTWG

Manufacturer No:
NVTFS5116PLTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 6A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NVTFS5116PLTWG is a single P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The NVTFS5116PLTWG features a small footprint of 3.3 x 3.3 mm, making it ideal for compact designs. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and industrial environments. The MOSFET is lead-free and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (Tmb = 25°C) ID -14 A
Continuous Drain Current (Tmb = 100°C) ID -10 A
Power Dissipation (Tmb = 25°C) PD 21 W
Power Dissipation (Tmb = 100°C) PD 10 W
Drain-to-Source On Resistance (VGS = -10 V, ID = -7 A) RDS(on) 37 - 52
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Small Footprint: 3.3 x 3.3 mm for compact design.
  • Low RDS(on): Minimizes conduction losses with values as low as 37 - 52 mΩ.
  • Low Capacitance: Reduces driver losses.
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and industrial applications.
  • Pb-Free and RoHS Compliant: Aligns with environmental standards.
  • Wettable Flanks: Available in versions with wettable flanks for improved solder joint inspection.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Power Management: Used in high-performance power management systems requiring low on-resistance and high current handling.
  • DC-DC Converters: Ideal for use in DC-DC converters and power supplies.
  • Motor Control: Can be used in motor control circuits due to its high current and low on-resistance characteristics.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTFS5116PLTWG?

    The maximum drain-to-source voltage is -60 V.

  2. What is the continuous drain current at Tmb = 25°C?

    The continuous drain current at Tmb = 25°C is -14 A.

  3. What is the power dissipation at Tmb = 25°C?

    The power dissipation at Tmb = 25°C is 21 W.

  4. What is the typical on-resistance of the NVTFS5116PLTWG?

    The typical on-resistance is 37 - 52 mΩ at VGS = -10 V and ID = -7 A.

  5. Is the NVTFS5116PLTWG AEC-Q101 qualified?

    Yes, the NVTFS5116PLTWG is AEC-Q101 qualified.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +175 °C.

  7. Is the NVTFS5116PLTWG lead-free and RoHS compliant?

    Yes, the NVTFS5116PLTWG is lead-free and RoHS compliant.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  9. What are some common applications of the NVTFS5116PLTWG?

    Common applications include automotive systems, industrial power management, DC-DC converters, and motor control circuits.

  10. What is the package type of the NVTFS5116PLTWG?

    The package type is WDFN8 with dimensions of 3.3 x 3.3 mm.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1258 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 21W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NVTFS5116PLTWG NVTFS5116PLTAG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 7A, 10V 52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 25 V 1258 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 21W (Tc) 3.2W (Ta), 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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