NVD5C688NLT4G
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onsemi NVD5C688NLT4G

Manufacturer No:
NVD5C688NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 60V 17A DPAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NVD5C688NLT4G is a high-performance N-channel enhancement mode power MOSFET produced by onsemi. This device is designed for high-power applications requiring low on-resistance and high current handling. It is packaged in the DPAK (TO-252) surface mount format, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
Maximum Operating Voltage (Vds)60 V
Maximum Continuous Drain Current (Id)17 A (at Tc)
Maximum Power Dissipation (Pd)18 W (at Tc)
On-Resistance (Rds(on))27.4 mΩ (at Vgs = 10 V, Id = 10 A)
Threshold Voltage (Vth)1.2 V (at Id = 15 μA)
Maximum Operating Temperature+175 °C
Package TypeDPAK (TO-252)
QualificationAEC-Q101

Key Features

  • Low on-resistance (Rds(on)) of 27.4 mΩ at Vgs = 10 V, Id = 10 A, ensuring minimal power loss.
  • High continuous drain current of 17 A and peak drain current of up to 77 A.
  • High maximum operating voltage of 60 V, suitable for a variety of high-voltage applications.
  • AEC-Q101 qualified, making it reliable for automotive and other demanding environments.
  • Surface mount DPAK package for easy integration into modern electronic designs.

Applications

The NVD5C688NLT4G is suitable for various high-power applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management, motor control, and other high-reliability applications.
  • Power supplies: Its low on-resistance and high current handling make it a good choice for power supply designs.
  • Motor control: It can be used in motor drive circuits due to its ability to handle high currents and voltages.
  • Industrial control: Suitable for industrial control systems that require robust and reliable power management.

Q & A

  1. What is the maximum operating voltage of the NVD5C688NLT4G?
    The maximum operating voltage is 60 V.
  2. What is the maximum continuous drain current of the NVD5C688NLT4G?
    The maximum continuous drain current is 17 A at Tc.
  3. What is the on-resistance (Rds(on)) of the NVD5C688NLT4G?
    The on-resistance is 27.4 mΩ at Vgs = 10 V, Id = 10 A.
  4. What is the maximum power dissipation of the NVD5C688NLT4G?
    The maximum power dissipation is 18 W at Tc.
  5. What is the package type of the NVD5C688NLT4G?
    The package type is DPAK (TO-252).
  6. Is the NVD5C688NLT4G AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  7. What are some typical applications for the NVD5C688NLT4G?
    Typical applications include automotive systems, power supplies, motor control, and industrial control.
  8. What is the threshold voltage (Vth) of the NVD5C688NLT4G?
    The threshold voltage is 1.2 V at Id = 15 μA.
  9. What is the maximum operating temperature of the NVD5C688NLT4G?
    The maximum operating temperature is +175 °C.
  10. Why is the NVD5C688NLT4G suitable for high-power applications?
    It is suitable due to its low on-resistance, high current handling, and high maximum operating voltage.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.4 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):18W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5C688NLT4G NVD5C648NLT4G NVD5C668NLT4G NVD5C684NLT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 18A (Ta), 89A (Tc) 49A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27.4mOhm @ 10A, 10V 4.1mOhm @ 45A, 10V 8.9mOhm @ 25A, 10V 16.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 4.5 V 39 nC @ 10 V 8.7 nC @ 4.5 V 4.6 nC @ 4.5 V
Vgs (Max) ±16V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V 2900 pF @ 25 V 1300 pF @ 25 V 700 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 18W (Tc) 3.1W (Ta), 72W (Tc) 44W (Tc) 27W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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