NVD5C668NLT4G
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onsemi NVD5C668NLT4G

Manufacturer No:
NVD5C668NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CHANNEL 60V 49A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5C668NLT4G is an N-Channel Enhancement Mode Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling capabilities. It features a robust DPAK package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Drain-Source Breakdown Voltage (Vds)60 V
Continuous Drain Current (Id) @ 25°C49 A
Package Type3-Pin DPAK
Power Dissipation (Pd) @ Tc44 W

Key Features

  • Low On-Resistance: Ensures efficient power handling and minimal heat generation.
  • High Continuous Drain Current: Supports high current applications up to 49 A.
  • Robust DPAK Package: Provides good thermal performance and ease of mounting.
  • Enhancement Mode Operation: Requires a positive gate-source voltage to create a conductive channel.
  • High Drain-Source Breakdown Voltage: Offers reliability and protection against voltage spikes.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Used in motor drive circuits for efficient and reliable operation.
  • Switching Applications: Ideal for high-frequency switching in audio amplifiers, power amplifiers, and other electronic devices.
  • Automotive Systems: Can be used in automotive electronics for battery management, lighting, and other power-intensive applications.

Q & A

  1. What is the drain-source breakdown voltage of the NVD5C668NLT4G?
    The drain-source breakdown voltage (Vds) is 60 V.
  2. What is the continuous drain current rating of the NVD5C668NLT4G?
    The continuous drain current (Id) is 49 A at 25°C.
  3. What package type is the NVD5C668NLT4G available in?
    The NVD5C668NLT4G is available in a 3-Pin DPAK package.
  4. What is the power dissipation capability of the NVD5C668NLT4G?
    The power dissipation (Pd) is 44 W at Tc.
  5. Is the NVD5C668NLT4G suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling capabilities.
  6. Can the NVD5C668NLT4G be used in automotive systems?
    Yes, it can be used in automotive electronics for various power-intensive applications.
  7. What is the polarity of the NVD5C668NLT4G MOSFET?
    The NVD5C668NLT4G is an N-Channel MOSFET.
  8. How many channels does the NVD5C668NLT4G have?
    The NVD5C668NLT4G has 1 channel.
  9. Where can I find detailed specifications and datasheets for the NVD5C668NLT4G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as on distributor websites such as Mouser, Digi-Key, and RS Components.
  10. Is the NVD5C668NLT4G available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):44W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5C668NLT4G NVD5C688NLT4G NVD5C648NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 17A (Tc) 18A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.9mOhm @ 25A, 10V 27.4mOhm @ 10A, 10V 4.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 4.5 V 3.4 nC @ 4.5 V 39 nC @ 10 V
Vgs (Max) ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 400 pF @ 25 V 2900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 44W (Tc) 18W (Tc) 3.1W (Ta), 72W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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