NVD5C648NLT4G
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onsemi NVD5C648NLT4G

Manufacturer No:
NVD5C648NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 18A/89A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NVD5C648NLT4G is a high-performance, single N-channel enhancement mode power MOSFET produced by onsemi. This device is designed to offer superior efficiency and reliability in a variety of power management applications. With its robust specifications and compact DPAK package, it is well-suited for use in automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-Resistance)4.1 mΩ
ID (Continuous Drain Current)89 A
TJ (Junction Temperature)+175°C
Pd (Power Dissipation)72 W
PackageDPAK
QualificationAEC-Q101

Key Features

  • Low On-Resistance (RDS(on)) of 4.1 mΩ, ensuring minimal power loss.
  • High Continuous Drain Current (ID) of 89 A, suitable for high-power applications.
  • Enhancement mode operation for efficient switching.
  • Compact DPAK package for space-efficient designs.
  • AEC-Q101 qualified, making it suitable for automotive applications.

Applications

  • Automotive systems, including power steering, power windows, and fuel pumps.
  • Industrial power supplies and motor control systems.
  • Consumer electronics, such as power adapters and battery chargers.
  • Renewable energy systems, including solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the NVD5C648NLT4G?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the on-resistance of the NVD5C648NLT4G?
    The on-resistance (RDS(on)) is 4.1 mΩ.
  3. What is the continuous drain current of the NVD5C648NLT4G?
    The continuous drain current (ID) is 89 A.
  4. What is the maximum junction temperature of the NVD5C648NLT4G?
    The maximum junction temperature (TJ) is +175°C.
  5. What is the power dissipation of the NVD5C648NLT4G?
    The power dissipation (Pd) is 72 W.
  6. What package type does the NVD5C648NLT4G come in?
    The NVD5C648NLT4G comes in a DPAK package.
  7. Is the NVD5C648NLT4G AEC-Q101 qualified?
    Yes, the NVD5C648NLT4G is AEC-Q101 qualified, making it suitable for automotive applications.
  8. What are some common applications of the NVD5C648NLT4G?
    Common applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems.
  9. Why is the NVD5C648NLT4G preferred in high-power applications?
    The NVD5C648NLT4G is preferred due to its low on-resistance and high continuous drain current, which minimize power loss and support high-power requirements.
  10. Where can I purchase the NVD5C648NLT4G?
    The NVD5C648NLT4G can be purchased from various suppliers, including Mouser Electronics, X-ON Electronics, and other global distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.1mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 72W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5C648NLT4G NVD5C668NLT4G NVD5C688NLT4G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 89A (Tc) 49A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 45A, 10V 8.9mOhm @ 25A, 10V 27.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 8.7 nC @ 4.5 V 3.4 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 1300 pF @ 25 V 400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 72W (Tc) 44W (Tc) 18W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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