Overview
The NVD3055L170T4G is a logic level, N-Channel, enhancement mode power MOSFET produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides superior switching performance. It is particularly suited for low voltage applications requiring fast switching, low in-line power loss, and resistance to transients.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 60 | V |
| Gate-Source Voltage (VGS) - Continuous | ±15 | V |
| Maximum Drain Current (ID) - Continuous | 9.0 | A |
| Maximum Drain Current (ID) - Pulsed | - | - |
| Maximum Power Dissipation (PD) | - | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -65 to 150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | - | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | - | °C/W |
| Static Drain-Source On-Resistance (RDS(on)) | 170 mΩ @ VGS = 5.0 V, ID = 4.5 A | mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 - 1.7 V | V |
| Turn-On Delay Time (td(on)) | 9.7 - 20 ns | ns |
| Turn-Off Delay Time (td(off)) | 10 - 20 ns | ns |
| Gate Charge (Qg) | 4.7 - 10 nC | nC |
Key Features
- Logic level N-Channel enhancement mode power MOSFET
- High cell density DMOS technology for low on-state resistance and superior switching performance
- Low drive requirements allowing operation directly from logic drivers (VGS(TH) < 2V)
- High power and current handling capability in a widely used surface mount package (DPAK/IPAK)
- Pb-Free device
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
Applications
- Power supplies
- Converters
- Power motor controls
- Bridge circuits
- Low voltage, high speed switching applications
Q & A
- What is the maximum drain-source voltage (VDSS) of the NVD3055L170T4G MOSFET?
The maximum drain-source voltage (VDSS) is 60 V.
- What is the maximum continuous drain current (ID) of this MOSFET?
The maximum continuous drain current (ID) is 9.0 A.
- What is the typical on-state resistance (RDS(on)) of the NVD3055L170T4G?
The typical on-state resistance (RDS(on)) is 170 mΩ at VGS = 5.0 V and ID = 4.5 A.
- What are the operating and storage temperature ranges for this device?
The operating and storage temperature range is -65°C to 150°C.
- Is the NVD3055L170T4G Pb-Free?
- What are some typical applications for the NVD3055L170T4G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the gate threshold voltage (VGS(th)) range for this MOSFET?
The gate threshold voltage (VGS(th)) range is 1.0 to 1.7 V.
- What is the turn-on delay time (td(on)) for the NVD3055L170T4G?
The turn-on delay time (td(on)) is between 9.7 and 20 ns.
- Is the NVD3055L170T4G qualified for automotive applications?
- What package types are available for the NVD3055L170T4G?
The device is available in DPAK and IPAK surface mount packages.
