NTMTSC1D6N10MCTXG
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onsemi NTMTSC1D6N10MCTXG

Manufacturer No:
NTMTSC1D6N10MCTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 35A/267A 8TDFNW
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTMTSC1D6N10MCTXG is a high-performance, single N-Channel power MOSFET manufactured by onsemi. This device is designed for compact and efficient designs, featuring a 8x8mm flat lead package that enhances thermal performance. It is suitable for various industrial and power management applications where high current handling and low on-resistance are critical.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
On-Resistance (Rds(on))1.7 mΩ
Continuous Drain Current (Id)267 A
Package Type8-Pin TDFNW8
Thermal PerformanceHigh thermal performance due to POWER 88 Dual Cool package
Lead TypePb-Free

Key Features

  • High current handling capability of up to 267 A
  • Low on-resistance of 1.7 mΩ for efficient power management
  • Compact 8x8mm flat lead package for enhanced thermal performance
  • Pb-Free, making it environmentally friendly
  • High thermal performance due to the POWER 88 Dual Cool package

Applications

The NTMTSC1D6N10MCTXG MOSFET is suitable for a variety of applications, including:

  • Industrial power management systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Renewable energy systems such as solar and wind power
  • Automotive and electric vehicle systems

Q & A

  1. What is the voltage rating of the NTMTSC1D6N10MCTXG MOSFET?
    The voltage rating (Vds) of the NTMTSC1D6N10MCTXG MOSFET is 100 V.
  2. What is the on-resistance (Rds(on)) of this MOSFET?
    The on-resistance (Rds(on)) is 1.7 mΩ.
  3. What is the maximum continuous drain current (Id) of this device?
    The maximum continuous drain current (Id) is 267 A.
  4. What type of package does the NTMTSC1D6N10MCTXG come in?
    The NTMTSC1D6N10MCTXG comes in an 8-Pin TDFNW8 package.
  5. Is the NTMTSC1D6N10MCTXG Pb-Free?
    Yes, the NTMTSC1D6N10MCTXG is Pb-Free.
  6. What are the key thermal features of this MOSFET?
    The MOSFET features high thermal performance due to the POWER 88 Dual Cool package.
  7. What are some common applications for the NTMTSC1D6N10MCTXG?
    Common applications include industrial power management, power supplies, motor control, renewable energy systems, and automotive systems.
  8. Where can I find detailed specifications for the NTMTSC1D6N10MCTXG?
    Detailed specifications can be found on the onsemi website, as well as through distributors like Digi-Key and RS Components.
  9. What is the significance of the 'POWER 88 Dual Cool' package?
    The 'POWER 88 Dual Cool' package enhances thermal performance, allowing for more efficient heat dissipation.
  10. Is the NTMTSC1D6N10MCTXG suitable for high-current applications?
    Yes, the NTMTSC1D6N10MCTXG is designed for high-current applications with a maximum continuous drain current of 267 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7630 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):5.1W (Ta), 291W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:8-TDFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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Similar Products

Part Number NTMTSC1D6N10MCTXG NTMTS1D6N10MCTXG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 267A (Tc) 36A (Ta), 273A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 90A, 10V 1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 650µA 4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 106 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7630 pF @ 50 V 7630 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 5.1W (Ta), 291W (Tc) 5W (Ta), 291W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount
Supplier Device Package 8-TDFNW (8.3x8.4) 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN 8-PowerTDFN

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