NTMFS4C08NT1G
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onsemi NTMFS4C08NT1G

Manufacturer No:
NTMFS4C08NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A/52A 5DFN
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The NTMFS4C08NT1G is a single N-channel power MOSFET produced by onsemi. This device is packaged in a SO-8FL (DFN-5x6) case and is designed for high-performance applications. It features low on-resistance, low capacitance, and optimized gate charge, making it suitable for minimizing conduction, driver, and switching losses. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 16.4 A
Continuous Drain Current (TA = 80°C) ID 12.3 A
Maximum Drain Current IDmax 80 A
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C
Source Current (Body Diode) IS 23 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 18 A) RDS(on) 4.6 - 5.8
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 30 A) RDS(on) 6.8 - 8.5
Junction-to-Case Thermal Resistance RJC 4.9 °C/W
Junction-to-Ambient Thermal Resistance (Steady State) RJA 49.8 °C/W

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum drain current of 80 A
  • Wide operating junction and storage temperature range from −55°C to +150°C

Applications

  • CPU Power Delivery
  • DC-DC Converters

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C08NT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 16.4 A at 25°C and 12.3 A at 80°C.

  3. What is the maximum drain current?

    The maximum drain current (IDmax) is 80 A.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is from −55°C to +150°C.

  5. Is the NTMFS4C08NT1G MOSFET RoHS compliant?
  6. What are the typical applications of the NTMFS4C08NT1G MOSFET?

    The typical applications include CPU Power Delivery and DC-DC Converters.

  7. What is the junction-to-case thermal resistance?

    The junction-to-case thermal resistance (RJC) is 4.9 °C/W.

  8. What is the drain-to-source on resistance at VGS = 10 V and ID = 18 A?

    The drain-to-source on resistance (RDS(on)) is between 4.6 mΩ and 5.8 mΩ at VGS = 10 V and ID = 18 A.

  9. What is the turn-on delay time and rise time?

    The turn-on delay time (td(ON)) is approximately 7.0 ns, and the rise time (tr) is approximately 26 ns.

  10. Is the NTMFS4C08NT1G MOSFET suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1113 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$1.34
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Part Number NTMFS4C08NT1G NTMFS4C09NT1G NTMFS4C08NT3G NTMFS4C58NT1G NTMFS4C01NT1G NTMFS4C028NT1G NTMFS4C03NT1G NTMFS4C05NT1G NTMFS4C06NT1G NTMFS4C08NAT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V - 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc) 9A (Ta) 9A (Ta), 52A (Tc) - 47A (Ta), 303A (Tc) 16.4A (Ta), 52A (Tc) 30A (Ta), 136A (Tc) 11.9A (Ta) 11A (Ta), 69A (Tc) 16.4A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V 5.8mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V - 0.9mOhm @ 30A, 10V 4.73mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA - 2.2V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V 10.9 nC @ 4.5 V 18.2 nC @ 10 V - 139 nC @ 10 V 22.2 nC @ 10 V 45.2 nC @ 10 V 14 nC @ 4.5 V 26 nC @ 10 V 18.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1113 pF @ 15 V 1252 pF @ 15 V 1113 pF @ 15 V - 10144 pF @ 15 V 1252 pF @ 15 V 3071 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V 1670 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 760mW (Ta) 760mW (Ta), 25.5W (Tc) 760mW (Ta), 25.5W (Tc) - 3.2W (Ta), 134W (Tc) 2.51W (Ta), 25.5W (Tc) 3.1W (Ta), 64W (Tc) 770mW (Ta), 33W (Tc) 770mW (Ta), 30.5W (Tc) 2.51W (Ta), 25.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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