NTMFS4C08NT1G
  • Share:

onsemi NTMFS4C08NT1G

Manufacturer No:
NTMFS4C08NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9A/52A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C08NT1G is a single N-channel power MOSFET produced by onsemi. This device is packaged in a SO-8FL (DFN-5x6) case and is designed for high-performance applications. It features low on-resistance, low capacitance, and optimized gate charge, making it suitable for minimizing conduction, driver, and switching losses. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 16.4 A
Continuous Drain Current (TA = 80°C) ID 12.3 A
Maximum Drain Current IDmax 80 A
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +150 °C
Source Current (Body Diode) IS 23 A
Drain-to-Source On Resistance (VGS = 10 V, ID = 18 A) RDS(on) 4.6 - 5.8
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 30 A) RDS(on) 6.8 - 8.5
Junction-to-Case Thermal Resistance RJC 4.9 °C/W
Junction-to-Ambient Thermal Resistance (Steady State) RJA 49.8 °C/W

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant
  • High current capability with a maximum drain current of 80 A
  • Wide operating junction and storage temperature range from −55°C to +150°C

Applications

  • CPU Power Delivery
  • DC-DC Converters

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C08NT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 80°C?

    The continuous drain current is 16.4 A at 25°C and 12.3 A at 80°C.

  3. What is the maximum drain current?

    The maximum drain current (IDmax) is 80 A.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is from −55°C to +150°C.

  5. Is the NTMFS4C08NT1G MOSFET RoHS compliant?
  6. What are the typical applications of the NTMFS4C08NT1G MOSFET?

    The typical applications include CPU Power Delivery and DC-DC Converters.

  7. What is the junction-to-case thermal resistance?

    The junction-to-case thermal resistance (RJC) is 4.9 °C/W.

  8. What is the drain-to-source on resistance at VGS = 10 V and ID = 18 A?

    The drain-to-source on resistance (RDS(on)) is between 4.6 mΩ and 5.8 mΩ at VGS = 10 V and ID = 18 A.

  9. What is the turn-on delay time and rise time?

    The turn-on delay time (td(ON)) is approximately 7.0 ns, and the rise time (tr) is approximately 26 ns.

  10. Is the NTMFS4C08NT1G MOSFET suitable for high-frequency switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1113 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$1.34
483

Please send RFQ , we will respond immediately.

Same Series
NTMFS4C08NT3G
NTMFS4C08NT3G
MOSFET N-CH 30V 9A/52A 5DFN
NTMFS4C08NT1G-001
NTMFS4C08NT1G-001
MOSFET N-CH 30V 9A/52A 5DFN

Similar Products

Part Number NTMFS4C08NT1G NTMFS4C09NT1G NTMFS4C08NT3G NTMFS4C58NT1G NTMFS4C01NT1G NTMFS4C028NT1G NTMFS4C03NT1G NTMFS4C05NT1G NTMFS4C06NT1G NTMFS4C08NAT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V - 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 52A (Tc) 9A (Ta) 9A (Ta), 52A (Tc) - 47A (Ta), 303A (Tc) 16.4A (Ta), 52A (Tc) 30A (Ta), 136A (Tc) 11.9A (Ta) 11A (Ta), 69A (Tc) 16.4A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V - 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V 5.8mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V - 0.9mOhm @ 30A, 10V 4.73mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA - 2.2V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V 10.9 nC @ 4.5 V 18.2 nC @ 10 V - 139 nC @ 10 V 22.2 nC @ 10 V 45.2 nC @ 10 V 14 nC @ 4.5 V 26 nC @ 10 V 18.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1113 pF @ 15 V 1252 pF @ 15 V 1113 pF @ 15 V - 10144 pF @ 15 V 1252 pF @ 15 V 3071 pF @ 15 V 1972 pF @ 15 V 1683 pF @ 15 V 1670 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 760mW (Ta) 760mW (Ta), 25.5W (Tc) 760mW (Ta), 25.5W (Tc) - 3.2W (Ta), 134W (Tc) 2.51W (Ta), 25.5W (Tc) 3.1W (Ta), 64W (Tc) 770mW (Ta), 33W (Tc) 770mW (Ta), 30.5W (Tc) 2.51W (Ta), 25.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP