Overview
The NTMFS4C09NT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This N-channel MOSFET is packaged in an SO-8FL (Small Outline 8 Flat Lead) package, which is Pb-free, halogen-free, and RoHS compliant. It is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Maximum Drain Current | ID | 52 | A |
| Maximum Junction Temperature | TJ | 150 | °C |
| Drain-to-Source On-State Resistance | RDS(on) | 4.6 - 5.8 mΩ @ VGS = 10 V, ID = 30 A | mΩ |
| Total Gate Charge | QG(TOT) | 10.9 nC @ VGS = 4.5 V, VDS = 15 V; ID = 30 A | nC |
| Rise Time | tr | 32 ns | ns |
| Output Capacitance | COSS | 610 pF | pF |
| Turn-On Delay Time | td(ON) | 10 ns @ VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω | ns |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High maximum drain current of 52 A
- High maximum drain-to-source voltage of 30 V
- Low gate-to-source threshold voltage of 1.3 - 2.1 V
Applications
- CPU Power Delivery
- DC-DC Converters
- Power Management Systems
- High-Current Switching Applications
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C09NT1G MOSFET?
The maximum drain-to-source voltage is 30 V. - What is the maximum drain current of the NTMFS4C09NT1G MOSFET?
The maximum drain current is 52 A. - What is the package type of the NTMFS4C09NT1G MOSFET?
The package type is SO-8FL. - Is the NTMFS4C09NT1G MOSFET RoHS compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant. - What are the typical applications of the NTMFS4C09NT1G MOSFET?
Typical applications include CPU power delivery, DC-DC converters, and high-current switching applications. - What is the maximum junction temperature of the NTMFS4C09NT1G MOSFET?
The maximum junction temperature is 150 °C. - What is the total gate charge of the NTMFS4C09NT1G MOSFET?
The total gate charge is 10.9 nC at VGS = 4.5 V, VDS = 15 V; ID = 30 A. - What is the rise time of the NTMFS4C09NT1G MOSFET?
The rise time is 32 ns. - What is the output capacitance of the NTMFS4C09NT1G MOSFET?
The output capacitance is 610 pF. - What is the turn-on delay time of the NTMFS4C09NT1G MOSFET?
The turn-on delay time is 10 ns at VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Ω.
