NTMFS0D7N03CGT1G
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onsemi NTMFS0D7N03CGT1G

Manufacturer No:
NTMFS0D7N03CGT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 59A/409A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS0D7N03CGT1G is a high-performance N-Channel power MOSFET manufactured by onsemi. This device is designed for high-current applications and features a compact DFN-5 package. It is characterized by its low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)59 A (Ta), 409 A (Tc)
On-Resistance (Rds(on))0.55 mΩ
Package TypeDFN-5 (5x6)
Mounting TypeSurface Mount
Maximum Power Dissipation4 W (Ta), 187 W (Tc)
MSL LevelMSL 1
ECCNEAR99

Key Features

  • Low on-resistance of 0.55 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 59 A (at ambient temperature) and 409 A (at case temperature).
  • Compact DFN-5 package, suitable for space-constrained designs.
  • Surface mount technology for easy integration into PCBs.
  • High maximum power dissipation, making it suitable for demanding applications.

Applications

The NTMFS0D7N03CGT1G MOSFET is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the NTMFS0D7N03CGT1G MOSFET?
    The voltage rating is 30 V.
  2. What is the continuous drain current of the NTMFS0D7N03CGT1G?
    The continuous drain current is 59 A at ambient temperature and 409 A at case temperature.
  3. What is the on-resistance of the NTMFS0D7N03CGT1G?
    The on-resistance is 0.55 mΩ.
  4. What package type does the NTMFS0D7N03CGT1G come in?
    The package type is DFN-5 (5x6).
  5. Is the NTMFS0D7N03CGT1G suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling capabilities.
  6. What is the maximum power dissipation of the NTMFS0D7N03CGT1G?
    The maximum power dissipation is 4 W at ambient temperature and 187 W at case temperature.
  7. What is the MSL level of the NTMFS0D7N03CGT1G?
    The MSL level is MSL 1.
  8. What is the ECCN classification of the NTMFS0D7N03CGT1G?
    The ECCN classification is EAR99.
  9. Is the NTMFS0D7N03CGT1G RoHS compliant?
    Yes, the NTMFS0D7N03CGT1G is RoHS compliant.
  10. Where can I find the datasheet for the NTMFS0D7N03CGT1G?
    You can find the datasheet on the official onsemi website or through distributors like Mouser, Farnell, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:59A (Ta), 409A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:147 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12300 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS0D7N03CGT1G NTMFS1D7N03CGT1G NTMFS0D9N03CGT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 59A (Ta), 409A (Tc) 35A (Ta), 170A (Tc) 48A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.65mOhm @ 30A, 10V 1.74mOhm @ 18A, 10V 0.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 280µA 2.2V @ 90µA 2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V 48 nC @ 10 V 131.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 15 V 3780 pF @ 15 V 9450 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 187W (Tc) 3.8W (Ta), 87W (Tc) 3.8W (Ta), 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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