NTMFS0D7N03CGT1G
  • Share:

onsemi NTMFS0D7N03CGT1G

Manufacturer No:
NTMFS0D7N03CGT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 59A/409A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS0D7N03CGT1G is a high-performance N-Channel power MOSFET manufactured by onsemi. This device is designed for high-current applications and features a compact DFN-5 package. It is characterized by its low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)59 A (Ta), 409 A (Tc)
On-Resistance (Rds(on))0.55 mΩ
Package TypeDFN-5 (5x6)
Mounting TypeSurface Mount
Maximum Power Dissipation4 W (Ta), 187 W (Tc)
MSL LevelMSL 1
ECCNEAR99

Key Features

  • Low on-resistance of 0.55 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 59 A (at ambient temperature) and 409 A (at case temperature).
  • Compact DFN-5 package, suitable for space-constrained designs.
  • Surface mount technology for easy integration into PCBs.
  • High maximum power dissipation, making it suitable for demanding applications.

Applications

The NTMFS0D7N03CGT1G MOSFET is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the NTMFS0D7N03CGT1G MOSFET?
    The voltage rating is 30 V.
  2. What is the continuous drain current of the NTMFS0D7N03CGT1G?
    The continuous drain current is 59 A at ambient temperature and 409 A at case temperature.
  3. What is the on-resistance of the NTMFS0D7N03CGT1G?
    The on-resistance is 0.55 mΩ.
  4. What package type does the NTMFS0D7N03CGT1G come in?
    The package type is DFN-5 (5x6).
  5. Is the NTMFS0D7N03CGT1G suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling capabilities.
  6. What is the maximum power dissipation of the NTMFS0D7N03CGT1G?
    The maximum power dissipation is 4 W at ambient temperature and 187 W at case temperature.
  7. What is the MSL level of the NTMFS0D7N03CGT1G?
    The MSL level is MSL 1.
  8. What is the ECCN classification of the NTMFS0D7N03CGT1G?
    The ECCN classification is EAR99.
  9. Is the NTMFS0D7N03CGT1G RoHS compliant?
    Yes, the NTMFS0D7N03CGT1G is RoHS compliant.
  10. Where can I find the datasheet for the NTMFS0D7N03CGT1G?
    You can find the datasheet on the official onsemi website or through distributors like Mouser, Farnell, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:59A (Ta), 409A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:147 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12300 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):4W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$2.72
31

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NTMFS0D7N03CGT1G NTMFS1D7N03CGT1G NTMFS0D9N03CGT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 59A (Ta), 409A (Tc) 35A (Ta), 170A (Tc) 48A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 0.65mOhm @ 30A, 10V 1.74mOhm @ 18A, 10V 0.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 280µA 2.2V @ 90µA 2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V 48 nC @ 10 V 131.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12300 pF @ 15 V 3780 pF @ 15 V 9450 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 4W (Ta), 187W (Tc) 3.8W (Ta), 87W (Tc) 3.8W (Ta), 144W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC