NTMFS0D9N03CGT1G
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onsemi NTMFS0D9N03CGT1G

Manufacturer No:
NTMFS0D9N03CGT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 48A/298A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS0D9N03CGT1G is a high-performance, single N-Channel MOSFET produced by onsemi. This device is designed to operate in a variety of power management and switching applications, offering high current handling and low on-resistance. The MOSFET is packaged in a 5DFN (Dual Flat No-Lead) package, which provides excellent thermal performance and a compact footprint.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current48 A (at Vgs = 10 V), 298 A (at Vgs = 4.5 V)
Package Type5DFN (Dual Flat No-Lead)

Key Features

  • High current handling capability with continuous drain current up to 48 A (at Vgs = 10 V) and 298 A (at Vgs = 4.5 V).
  • Low on-resistance, enhancing efficiency in power switching applications.
  • Compact 5DFN package for improved thermal performance and space-saving design.
  • High drain-source breakdown voltage of 30 V, ensuring robust operation in various power management scenarios.

Applications

The NTMFS0D9N03CGT1G MOSFET is suitable for a wide range of applications, including but not limited to:

  • Power management systems.
  • Switching power supplies.
  • Motor control and drive systems.
  • High-current DC-DC converters.
  • Automotive and industrial power systems.

Q & A

  1. What is the drain-source breakdown voltage of the NTMFS0D9N03CGT1G MOSFET? The drain-source breakdown voltage is 30 V.
  2. What is the continuous drain current of the NTMFS0D9N03CGT1G MOSFET? The continuous drain current is up to 48 A (at Vgs = 10 V) and 298 A (at Vgs = 4.5 V).
  3. What package type is used for the NTMFS0D9N03CGT1G MOSFET? The MOSFET is packaged in a 5DFN (Dual Flat No-Lead) package.
  4. What are the key features of the NTMFS0D9N03CGT1G MOSFET? Key features include high current handling, low on-resistance, and a compact 5DFN package.
  5. What are some typical applications for the NTMFS0D9N03CGT1G MOSFET? Typical applications include power management systems, switching power supplies, motor control, and high-current DC-DC converters.
  6. Who is the manufacturer of the NTMFS0D9N03CGT1G MOSFET? The manufacturer is onsemi.
  7. What is the transistor polarity of the NTMFS0D9N03CGT1G MOSFET? The transistor polarity is N-Channel.
  8. How many channels does the NTMFS0D9N03CGT1G MOSFET have? The MOSFET has 1 channel.
  9. What is the significance of the 5DFN package in the NTMFS0D9N03CGT1G MOSFET? The 5DFN package provides excellent thermal performance and a compact footprint, making it ideal for space-saving designs.
  10. Can the NTMFS0D9N03CGT1G MOSFET be used in automotive applications? Yes, the MOSFET can be used in automotive and industrial power systems due to its robust specifications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:48A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:131.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9450 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 144W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS0D9N03CGT1G NTMFS0D7N03CGT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 48A (Ta), 298A (Tc) 59A (Ta), 409A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 20A, 10V 0.65mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 200µA 2.2V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 131.4 nC @ 10 V 147 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9450 pF @ 15 V 12300 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 144W (Tc) 4W (Ta), 187W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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