NTLUS3A40PZTAG
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onsemi NTLUS3A40PZTAG

Manufacturer No:
NTLUS3A40PZTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 4A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A40PZTAG is a P-Channel MOSFET manufactured by onsemi. This device is part of the μCool family, known for its high performance and compact package. The NTLUS3A40PZTAG is housed in a UDFN6 package, which measures 2.0x2.0x0.55 mm, making it suitable for space-constrained applications. It is designed to provide low on-resistance and high current handling capabilities, making it an ideal choice for various power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
VGS (Gate-Source Voltage)±12 V
RDS(ON) (On-Resistance)120 mΩ @ -1.5 VGS
ID (Continuous Drain Current)9.4 A
PD (Power Dissipation)Dependent on package and thermal conditions
PackageUDFN6 (2.0x2.0x0.55 mm)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low On-Resistance: 120 mΩ @ -1.5 VGS
  • High Current Handling: Up to 9.4 A continuous drain current
  • Compact UDFN6 Package: 2.0x2.0x0.55 mm, suitable for space-constrained designs
  • ESD Protection: Enhanced ESD robustness for reliability in harsh environments
  • Low Thermal Resistance: Optimized for efficient heat dissipation

Applications

The NTLUS3A40PZTAG MOSFET is versatile and can be used in a variety of applications, including:

  • Power Management: DC-DC converters, voltage regulators, and power supplies
  • Switching Applications: Load switching, motor control, and relay drivers
  • Consumer Electronics: Portable devices, gaming consoles, and home appliances
  • Automotive Systems: Infotainment, body control modules, and power distribution

Q & A

  1. What is the drain-source voltage rating of the NTLUS3A40PZTAG MOSFET?
    The drain-source voltage rating is 20 V.
  2. What is the on-resistance of the NTLUS3A40PZTAG at -1.5 V gate-source voltage?
    The on-resistance is 120 mΩ.
  3. What is the maximum continuous drain current of the NTLUS3A40PZTAG?
    The maximum continuous drain current is 9.4 A.
  4. What package type is used for the NTLUS3A40PZTAG?
    The package type is UDFN6, measuring 2.0x2.0x0.55 mm.
  5. What are the operating temperature ranges for the NTLUS3A40PZTAG?
    The operating temperature range is from -55°C to 150°C.
  6. Does the NTLUS3A40PZTAG have ESD protection?
    Yes, it has enhanced ESD robustness.
  7. What are some common applications for the NTLUS3A40PZTAG?
    Common applications include power management, switching applications, consumer electronics, and automotive systems.
  8. Is the NTLUS3A40PZTAG lead-free?
    Yes, the NTLUS3A40PZTAG is lead-free.
  9. Where can I find detailed specifications for the NTLUS3A40PZTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What is the significance of the μCool family in the context of the NTLUS3A40PZTAG?
    The μCool family is known for its high performance and compact packaging, which the NTLUS3A40PZTAG is part of.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:29mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (2x2)
Package / Case:6-UDFN Exposed Pad
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Same Series
NTLUS3A40PZTBG
NTLUS3A40PZTBG
MOSFET P-CH 20V 4A 6UDFN

Similar Products

Part Number NTLUS3A40PZTAG NTLUS3A90PZTAG NTLUS3A40PZTBG NTLUS3A40PZCTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 2.6A (Ta) 4A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 29mOhm @ 6.4A, 4.5V 62mOhm @ 4A, 4.5V 29mOhm @ 6.4A, 4.5V 29mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V 12.3 nC @ 4.5 V 29 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 15 V 950 pF @ 10 V 2600 pF @ 15 V 2600 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 700mW (Ta) 600mW (Ta) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (2x2) 6-UDFN (1.6x1.6) 6-UDFN (2x2) 6-UDFN (2x2)
Package / Case 6-UDFN Exposed Pad 6-PowerUFDFN 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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