NTLUS3A90PZTAG
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onsemi NTLUS3A90PZTAG

Manufacturer No:
NTLUS3A90PZTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.6A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLUS3A90PZTAG is a power MOSFET produced by onsemi, designed to offer high performance and reliability in various electronic applications. This P-Channel MOSFET is housed in a compact UDFN-6 package, making it suitable for space-constrained designs. With its robust specifications and features, it is an excellent choice for applications requiring efficient power management.

Key Specifications

ParameterValue
Package / CaseUDFN-6
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Maximum Continuous Drain Current3 A
On-Resistance (Rds(on))60 mΩ (typical at Vgs = -4.5 V, Id = -1 A)
Operating Temperature Range-55°C to 150°C

Key Features

  • Compact UDFN-6 package with dimensions of 1.6x1.6x0.55 mm, ideal for space-saving designs.
  • P-Channel MOSFET with a drain-source breakdown voltage of 20 V.
  • Maximum continuous drain current of 3 A.
  • Low on-resistance (Rds(on)) of 60 mΩ (typical at Vgs = -4.5 V, Id = -1 A).
  • ESD protection for enhanced reliability.
  • Pb-Free and RoHS compliant.

Applications

The NTLUS3A90PZTAG MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management in consumer electronics.
  • Automotive systems requiring high reliability and efficiency.
  • Industrial control and automation.
  • Battery management systems.
  • Switching power supplies and DC-DC converters.

Q & A

  1. What is the package type of the NTLUS3A90PZTAG MOSFET?
    The NTLUS3A90PZTAG MOSFET is housed in a UDFN-6 package.
  2. What is the drain-source breakdown voltage of the NTLUS3A90PZTAG?
    The drain-source breakdown voltage is 20 V.
  3. What is the maximum continuous drain current of the NTLUS3A90PZTAG?
    The maximum continuous drain current is 3 A.
  4. What is the typical on-resistance (Rds(on)) of the NTLUS3A90PZTAG?
    The typical on-resistance (Rds(on)) is 60 mΩ at Vgs = -4.5 V, Id = -1 A.
  5. Is the NTLUS3A90PZTAG Pb-Free and RoHS compliant?
    Yes, the NTLUS3A90PZTAG is Pb-Free and RoHS compliant.
  6. What are some common applications of the NTLUS3A90PZTAG?
    Common applications include power management in consumer electronics, automotive systems, industrial control, battery management systems, and switching power supplies.
  7. What is the operating temperature range of the NTLUS3A90PZTAG?
    The operating temperature range is -55°C to 150°C.
  8. Does the NTLUS3A90PZTAG have ESD protection?
    Yes, the NTLUS3A90PZTAG has ESD protection for enhanced reliability.
  9. How many channels does the NTLUS3A90PZTAG MOSFET have?
    The NTLUS3A90PZTAG MOSFET has 1 channel.
  10. Where can I find detailed specifications of the NTLUS3A90PZTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.3 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFN (1.6x1.6)
Package / Case:6-PowerUFDFN
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Same Series
NTLUS3A90PZTBG
NTLUS3A90PZTBG
MOSFET P-CH 20V 2.6A 6UDFN

Similar Products

Part Number NTLUS3A90PZTAG NTLUS3A90PZTBG NTLUS3A40PZTAG NTLUS3A90PZCTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta) 4A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 62mOhm @ 4A, 4.5V 62mOhm @ 4A, 4.5V 29mOhm @ 6.4A, 4.5V 62mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 4.5 V 12.3 nC @ 4.5 V 29 nC @ 4.5 V 12.3 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 10 V 950 pF @ 10 V 2600 pF @ 15 V 950 pF @ 10 V
FET Feature - - - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta) 700mW (Ta) 600mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-UDFN (1.6x1.6) 6-UDFN (1.6x1.6) 6-UDFN (2x2) 6-UDFN (1.6x1.6)
Package / Case 6-PowerUFDFN 6-PowerUFDFN 6-UDFN Exposed Pad 6-PowerUFDFN

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