NTK3139PT5G
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onsemi NTK3139PT5G

Manufacturer No:
NTK3139PT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 660MA SOT723
Delivery:
Payment:
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Product Introduction

Overview

The NTK3139PT5G is a P-channel power MOSFET produced by onsemi, designed for small signal applications. It features a compact SOT-723 package, which is 44% smaller and 38% thinner than the SC-89 package, making it ideal for ultra-small portable electronics. This MOSFET is known for its low RDS(on) and low threshold levels, allowing operation at low logic level gate drive. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage VGS ±6 V
Continuous Drain Current (TA = 25°C) ID -780 mA mA
Continuous Drain Current (TA = 85°C) ID -570 mA mA
Power Dissipation (TA = 25°C) PD 310 mW mW
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C °C
Lead Temperature for Soldering Purposes TL 260 °C °C
Gate Threshold Voltage VGS(TH) -0.45 to -1.2 V V
Drain-to-Source On Resistance (VGS = -4.5 V, ID = -780 mA) RDS(on) 0.38 Ω Ω

Key Features

  • P-Channel Switch with Low RDS(on): Offers low on-resistance, enhancing efficiency in switching applications.
  • Compact Package: 44% smaller and 38% thinner than SC-89, ideal for ultra-small portable electronics.
  • Low Threshold Levels: Allows operation at low logic level gate drive.
  • ESD Protection: Built-in ESD protection for enhanced reliability.
  • Environmental Compliance: Pb-free, halogen-free, and RoHS compliant.

Applications

  • Load/Power Switching: Suitable for controlling power in various electronic devices.
  • Interfacing, Logic Switching: Used in logic circuits and interfaces due to its low threshold levels.
  • Battery Management for Ultra Small Portable Electronics: Ideal for managing power in compact, portable devices.

Q & A

  1. What is the maximum drain-to-source voltage of the NTK3139PT5G?

    The maximum drain-to-source voltage is -20 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is -780 mA at 25°C and -570 mA at 85°C.

  3. What is the power dissipation at 25°C?

    The power dissipation is 310 mW at 25°C.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150 °C.

  5. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  6. What are the key features of the NTK3139PT5G?

    Key features include low RDS(on), compact package, low threshold levels, ESD protection, and environmental compliance.

  7. In what applications is the NTK3139PT5G commonly used?

    Common applications include load/power switching, interfacing, logic switching, and battery management for ultra-small portable electronics.

  8. Is the NTK3139PT5G RoHS compliant?

    Yes, the NTK3139PT5G is RoHS compliant, Pb-free, and halogen-free.

  9. What is the typical gate threshold voltage of the NTK3139PT5G?

    The typical gate threshold voltage is between -0.45 V and -1.2 V.

  10. What is the typical drain-to-source on resistance at VGS = -4.5 V and ID = -780 mA?

    The typical drain-to-source on resistance is 0.38 Ω.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-723
Package / Case:SOT-723
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Same Series
NTK3139PT1G
NTK3139PT1G
MOSFET P-CH 20V 660MA SOT723

Similar Products

Part Number NTK3139PT5G NTK3139PT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 480mOhm @ 780mA, 4.5V 480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 16 V 170 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta) 310mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-723 SOT-723
Package / Case SOT-723 SOT-723

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