Overview
The NTK3139PT1G is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and compact packaging. The NTK3139PT1G features a surface mount SOT-723 package, which is 44% smaller in footprint and 38% thinner than the SC-89 package, making it ideal for space-constrained designs. It operates with a maximum drain-to-source voltage of 20 V and a maximum drain current of 780 mA, making it suitable for a variety of power switching and logic interfacing applications.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
FET Type | - | P-Channel | - |
Drain-to-Source Voltage | Vdss | 20 | V |
Drain-Source On Resistance (Max) | Rds(on) | 0.48 | Ω |
Maximum Power Dissipation | Pd | 450 | mW |
Maximum Drain Current | Id | 780 | mA |
Maximum Gate-Source Voltage | Vgs | ±6 | V |
Gate Threshold Voltage | Vgs(th) | -1.2 | V |
Maximum Junction Temperature | Tj | 150 | °C |
Package Style | - | SOT-723 | - |
Mounting Method | - | Surface Mount | - |
Key Features
- P-Channel MOSFET with low on-resistance (Rds(on)) of 0.38 Ω at Vgs = -4.5 V and 0.52 Ω at Vgs = -2.5 V.
- Compact SOT-723 package, 44% smaller in footprint and 38% thinner than SC-89.
- Low threshold levels allowing operation at 1.5 V gate drive.
- ESD protection.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- Operated at low logic level gate drive).
Applications
- Load/Power Switching).
- Logic Switching and Interfacing).
- Battery Management for ultra-small portable electronics).
Q & A
- What is the maximum drain-to-source voltage of the NTK3139PT1G MOSFET?
The maximum drain-to-source voltage (Vdss) is 20 V.
- What is the typical on-resistance of the NTK3139PT1G?
The typical on-resistance (Rds(on)) is 0.38 Ω at Vgs = -4.5 V and 0.52 Ω at Vgs = -2.5 V).
- What is the maximum drain current of the NTK3139PT1G?
The maximum drain current (Id) is 780 mA).
- What is the package style of the NTK3139PT1G?
The package style is SOT-723).
- Is the NTK3139PT1G RoHS compliant?
- What are the typical applications of the NTK3139PT1G?
The typical applications include load/power switching, logic switching and interfacing, and battery management for ultra-small portable electronics).
- What is the maximum junction temperature of the NTK3139PT1G?
The maximum junction temperature (Tj) is 150 °C).
- What is the gate threshold voltage of the NTK3139PT1G?
The gate threshold voltage (Vgs(th)) is typically -1.2 V).
- Does the NTK3139PT1G have ESD protection?
- What is the rise time of the NTK3139PT1G?
The rise time (tr) is 5.8 ns).