NTK3139PT1G
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onsemi NTK3139PT1G

Manufacturer No:
NTK3139PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 660MA SOT723
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTK3139PT1G is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and compact packaging. The NTK3139PT1G features a surface mount SOT-723 package, which is 44% smaller in footprint and 38% thinner than the SC-89 package, making it ideal for space-constrained designs. It operates with a maximum drain-to-source voltage of 20 V and a maximum drain current of 780 mA, making it suitable for a variety of power switching and logic interfacing applications.

Key Specifications

Parameter Symbol Value Unit
FET Type - P-Channel -
Drain-to-Source Voltage Vdss 20 V
Drain-Source On Resistance (Max) Rds(on) 0.48 Ω
Maximum Power Dissipation Pd 450 mW
Maximum Drain Current Id 780 mA
Maximum Gate-Source Voltage Vgs ±6 V
Gate Threshold Voltage Vgs(th) -1.2 V
Maximum Junction Temperature Tj 150 °C
Package Style - SOT-723 -
Mounting Method - Surface Mount -

Key Features

  • P-Channel MOSFET with low on-resistance (Rds(on)) of 0.38 Ω at Vgs = -4.5 V and 0.52 Ω at Vgs = -2.5 V.
  • Compact SOT-723 package, 44% smaller in footprint and 38% thinner than SC-89.
  • Low threshold levels allowing operation at 1.5 V gate drive.
  • ESD protection.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • Operated at low logic level gate drive).

Applications

  • Load/Power Switching).
  • Logic Switching and Interfacing).
  • Battery Management for ultra-small portable electronics).

Q & A

  1. What is the maximum drain-to-source voltage of the NTK3139PT1G MOSFET?

    The maximum drain-to-source voltage (Vdss) is 20 V.

  2. What is the typical on-resistance of the NTK3139PT1G?

    The typical on-resistance (Rds(on)) is 0.38 Ω at Vgs = -4.5 V and 0.52 Ω at Vgs = -2.5 V).

  3. What is the maximum drain current of the NTK3139PT1G?

    The maximum drain current (Id) is 780 mA).

  4. What is the package style of the NTK3139PT1G?

    The package style is SOT-723).

  5. Is the NTK3139PT1G RoHS compliant?
  6. What are the typical applications of the NTK3139PT1G?

    The typical applications include load/power switching, logic switching and interfacing, and battery management for ultra-small portable electronics).

  7. What is the maximum junction temperature of the NTK3139PT1G?

    The maximum junction temperature (Tj) is 150 °C).

  8. What is the gate threshold voltage of the NTK3139PT1G?

    The gate threshold voltage (Vgs(th)) is typically -1.2 V).

  9. Does the NTK3139PT1G have ESD protection?
  10. What is the rise time of the NTK3139PT1G?

    The rise time (tr) is 5.8 ns).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:480mOhm @ 780mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:170 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-723
Package / Case:SOT-723
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In Stock

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Same Series
NTK3139PT5G
NTK3139PT5G
MOSFET P-CH 20V 660MA SOT723

Similar Products

Part Number NTK3139PT1G NTK3139PT5G NTK3139PT1H
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V 20 V -
Current - Continuous Drain (Id) @ 25°C 660mA (Ta) 660mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 480mOhm @ 780mA, 4.5V 480mOhm @ 780mA, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±6V ±6V -
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 16 V 170 pF @ 16 V -
FET Feature - - -
Power Dissipation (Max) 310mW (Ta) 310mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package SOT-723 SOT-723 -
Package / Case SOT-723 SOT-723 -

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