NTHL040N120SC1
  • Share:

onsemi NTHL040N120SC1

Manufacturer No:
NTHL040N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 60A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHL040N120SC1 is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC family. This device is designed for high-performance applications requiring low on-resistance and high voltage handling. The NTHL040N120SC1 is packaged in a TO-247-3L package, making it suitable for a variety of power electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
RDS(ON) (On-Resistance)40 mΩ
ID (Continuous Drain Current)42 A
IDm (Pulsed Drain Current)240 A
PD (Power Dissipation)174 W
PackageTO-247-3L

Key Features

  • Low on-resistance (RDS(ON)) of 40 mΩ, reducing conduction losses.
  • High voltage rating of 1200 V, suitable for high-power applications.
  • High current handling with continuous drain current of 42 A and pulsed drain current of 240 A.
  • High power dissipation capability of 174 W.
  • EliteSiC technology for enhanced performance and reliability.

Applications

The NTHL040N120SC1 is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NTHL040N120SC1?
    The maximum drain-source voltage is 1200 V.
  2. What is the on-resistance of the NTHL040N120SC1?
    The on-resistance (RDS(ON)) is 40 mΩ.
  3. What is the continuous drain current of the NTHL040N120SC1?
    The continuous drain current (ID) is 42 A.
  4. What is the pulsed drain current of the NTHL040N120SC1?
    The pulsed drain current (IDm) is 240 A.
  5. What is the power dissipation capability of the NTHL040N120SC1?
    The power dissipation capability is 174 W.
  6. In what package is the NTHL040N120SC1 available?
    The NTHL040N120SC1 is available in a TO-247-3L package.
  7. What technology does the NTHL040N120SC1 use?
    The NTHL040N120SC1 uses onsemi's EliteSiC technology.
  8. What are some typical applications for the NTHL040N120SC1?
    Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching applications.
  9. Where can I find more detailed specifications for the NTHL040N120SC1?
    You can find detailed specifications in the datasheet available on onsemi's official website or through distributors like Mouser and TME.
  10. Is the NTHL040N120SC1 suitable for high-power switching applications?
    Yes, the NTHL040N120SC1 is highly suitable for high-power switching applications due to its low on-resistance and high voltage rating.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):348W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$20.67
20

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NTHL040N120SC1 NTHL080N120SC1 NTH4L040N120SC1 NTHL020N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 44A (Tc) 58A (Tc) 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 56mOhm @ 35A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 10mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V 106 nC @ 20 V 203 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V 1670 pF @ 800 V 1762 pF @ 800 V 2890 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 348W (Tc) 348W (Tc) 319W (Tc) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-4L TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-4 TO-247-3

Related Product By Categories

FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP