NTHL040N120SC1
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onsemi NTHL040N120SC1

Manufacturer No:
NTHL040N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 60A TO247-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTHL040N120SC1 is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC family. This device is designed for high-performance applications requiring low on-resistance and high voltage handling. The NTHL040N120SC1 is packaged in a TO-247-3L package, making it suitable for a variety of power electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
RDS(ON) (On-Resistance)40 mΩ
ID (Continuous Drain Current)42 A
IDm (Pulsed Drain Current)240 A
PD (Power Dissipation)174 W
PackageTO-247-3L

Key Features

  • Low on-resistance (RDS(ON)) of 40 mΩ, reducing conduction losses.
  • High voltage rating of 1200 V, suitable for high-power applications.
  • High current handling with continuous drain current of 42 A and pulsed drain current of 240 A.
  • High power dissipation capability of 174 W.
  • EliteSiC technology for enhanced performance and reliability.

Applications

The NTHL040N120SC1 is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NTHL040N120SC1?
    The maximum drain-source voltage is 1200 V.
  2. What is the on-resistance of the NTHL040N120SC1?
    The on-resistance (RDS(ON)) is 40 mΩ.
  3. What is the continuous drain current of the NTHL040N120SC1?
    The continuous drain current (ID) is 42 A.
  4. What is the pulsed drain current of the NTHL040N120SC1?
    The pulsed drain current (IDm) is 240 A.
  5. What is the power dissipation capability of the NTHL040N120SC1?
    The power dissipation capability is 174 W.
  6. In what package is the NTHL040N120SC1 available?
    The NTHL040N120SC1 is available in a TO-247-3L package.
  7. What technology does the NTHL040N120SC1 use?
    The NTHL040N120SC1 uses onsemi's EliteSiC technology.
  8. What are some typical applications for the NTHL040N120SC1?
    Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching applications.
  9. Where can I find more detailed specifications for the NTHL040N120SC1?
    You can find detailed specifications in the datasheet available on onsemi's official website or through distributors like Mouser and TME.
  10. Is the NTHL040N120SC1 suitable for high-power switching applications?
    Yes, the NTHL040N120SC1 is highly suitable for high-power switching applications due to its low on-resistance and high voltage rating.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):348W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number NTHL040N120SC1 NTHL080N120SC1 NTH4L040N120SC1 NTHL020N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 44A (Tc) 58A (Tc) 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 56mOhm @ 35A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 10mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V 106 nC @ 20 V 203 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V 1670 pF @ 800 V 1762 pF @ 800 V 2890 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 348W (Tc) 348W (Tc) 319W (Tc) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-4L TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-4 TO-247-3

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