NTHL040N120SC1
  • Share:

onsemi NTHL040N120SC1

Manufacturer No:
NTHL040N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 60A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHL040N120SC1 is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC family. This device is designed for high-performance applications requiring low on-resistance and high voltage handling. The NTHL040N120SC1 is packaged in a TO-247-3L package, making it suitable for a variety of power electronics applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)1200 V
RDS(ON) (On-Resistance)40 mΩ
ID (Continuous Drain Current)42 A
IDm (Pulsed Drain Current)240 A
PD (Power Dissipation)174 W
PackageTO-247-3L

Key Features

  • Low on-resistance (RDS(ON)) of 40 mΩ, reducing conduction losses.
  • High voltage rating of 1200 V, suitable for high-power applications.
  • High current handling with continuous drain current of 42 A and pulsed drain current of 240 A.
  • High power dissipation capability of 174 W.
  • EliteSiC technology for enhanced performance and reliability.

Applications

The NTHL040N120SC1 is ideal for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NTHL040N120SC1?
    The maximum drain-source voltage is 1200 V.
  2. What is the on-resistance of the NTHL040N120SC1?
    The on-resistance (RDS(ON)) is 40 mΩ.
  3. What is the continuous drain current of the NTHL040N120SC1?
    The continuous drain current (ID) is 42 A.
  4. What is the pulsed drain current of the NTHL040N120SC1?
    The pulsed drain current (IDm) is 240 A.
  5. What is the power dissipation capability of the NTHL040N120SC1?
    The power dissipation capability is 174 W.
  6. In what package is the NTHL040N120SC1 available?
    The NTHL040N120SC1 is available in a TO-247-3L package.
  7. What technology does the NTHL040N120SC1 use?
    The NTHL040N120SC1 uses onsemi's EliteSiC technology.
  8. What are some typical applications for the NTHL040N120SC1?
    Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching applications.
  9. Where can I find more detailed specifications for the NTHL040N120SC1?
    You can find detailed specifications in the datasheet available on onsemi's official website or through distributors like Mouser and TME.
  10. Is the NTHL040N120SC1 suitable for high-power switching applications?
    Yes, the NTHL040N120SC1 is highly suitable for high-power switching applications due to its low on-resistance and high voltage rating.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):348W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$20.67
20

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number NTHL040N120SC1 NTHL080N120SC1 NTH4L040N120SC1 NTHL020N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 44A (Tc) 58A (Tc) 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 56mOhm @ 35A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 10mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V 106 nC @ 20 V 203 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V 1670 pF @ 800 V 1762 pF @ 800 V 2890 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 348W (Tc) 348W (Tc) 319W (Tc) 535W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-4L TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-4 TO-247-3

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5