Overview
The NTHL080N120SC1 is a Silicon Carbide (SiC) MOSFET from onsemi, utilizing a new technology that offers superior switching performance and higher reliability compared to traditional silicon MOSFETs. This device is part of onsemi's EliteSiC family and is designed to provide low ON resistance and compact chip size, resulting in low capacitance and gate charge. This leads to system benefits such as highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Key Specifications
| Parameter | Value |
|---|---|
| Blocking Voltage (BVDSS) | 1200 V |
| Maximum Drain Current (ID(max)) | 31 A |
| Typical ON Resistance (RDS(on) @ 25°C) | 80 mΩ |
| Maximum ON Resistance (RDS(on) @ Vgs = 20V, Id = 20A) | 110 mΩ |
| Total Gate Charge (Qg) | 56 nC |
| Output Capacitance | 80 pF |
| Maximum Junction Temperature (Tj(max)) | 175°C |
| Package Type | TO-247-3LD |
Key Features
- High Speed Switching and Low Capacitance: Enables operation at very high frequencies, reducing EMI issues.
- Low ON Resistance: Ensures low power losses and high efficiency.
- Fast Turn ON and OFF: Combined with low forward voltage to reduce total power losses and cooling requirements.
- Robustness and Ruggedness: High surge, avalanche capability, and robustness against short circuits enhance overall reliability and longer life expectancy.
- Patented Termination Structure: Adds to reliability and operational stability.
- 100% UIL Tested: Ensures high reliability and quality.
Applications
- Power Factor Correction (PFC): High efficiency and fast switching make it ideal for PFC applications.
- Boost Inverter: Suitable for high-frequency operation and high power density.
- PV Charging and Solar Inverter: Efficient and reliable for solar energy systems.
- Network and Server Power Supply: Reduces system size and improves efficiency in power supply units.
- Automotive DC-DC and Onboard Charger Applications: AEC-Q101 qualified for automotive use, offering high reliability and performance.
Q & A
- What is the blocking voltage of the NTHL080N120SC1 MOSFET?
The blocking voltage (BVDSS) is 1200 V.
- What is the maximum drain current of the NTHL080N120SC1?
The maximum drain current (ID(max)) is 31 A).
- What is the typical ON resistance of the NTHL080N120SC1?
The typical ON resistance (RDS(on) @ 25°C) is 80 mΩ).
- What are the key benefits of using Silicon Carbide (SiC) technology in the NTHL080N120SC1?
The key benefits include superior switching performance, higher reliability, low ON resistance, low capacitance, and high power density compared to traditional silicon MOSFETs).
- What are some common applications for the NTHL080N120SC1 MOSFET?
Common applications include PFC, boost inverter, PV charging, solar inverter, network power supply, server power supply, and automotive DC-DC and onboard charger applications).
- What is the maximum junction temperature of the NTHL080N120SC1?
The maximum junction temperature (Tj(max)) is 175°C).
- What package type is the NTHL080N120SC1 available in?
The NTHL080N120SC1 is available in the TO-247-3LD package type).
- Does the NTHL080N120SC1 have any special testing or qualification?
Yes, it is 100% UIL tested and AEC-Q101 qualified for automotive applications).
- What are the advantages of the patented termination structure in the NTHL080N120SC1?
The patented termination structure enhances reliability, ruggedness, and operational stability).
- How does the NTHL080N120SC1 reduce EMI issues?
The device's low capacitance supports high-frequency switching, which reduces troublesome EMI issues).
