Overview
The NTH4L080N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, part of their EliteSiC family. This device leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. Key benefits include low ON resistance, compact chip size, low capacitance, and low gate charge, resulting in higher efficiency, faster operation frequencies, increased power density, reduced EMI, and a smaller system size.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSmax) | 1200 | V |
| Max. Gate-to-Source Voltage (VGSmax) | -15 / +25 | V |
| Continuous Drain Current (ID) | 29 A (at VGS = 20 V, TC = 25°C) | A |
| Pulse Drain Current (ID(Pulse)) | 125 A | A |
| Static Drain-to-Source On Resistance (RDS(on)) | 80 mΩ (at VGS = 20 V, ID = 20 A) | mΩ |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.88 °C/W | °C/W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +175 | °C |
Key Features
- 1200 V @ TJ = 175°C
- Max RDS(on) = 110 mΩ at VGS = 20 V, ID = 20 A
- High Speed Switching with Low Capacitance
- 100% Avalanche Tested
- Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)
Applications
- Industrial Motor Drive
- UPS (Uninterruptible Power Supply)
- Boost Inverter
- PV Charger (Photovoltaic Charger)
Q & A
- What is the maximum drain-to-source voltage of the NTH4L080N120SC1?
The maximum drain-to-source voltage (VDSmax) is 1200 V.
- What is the typical on-resistance of the NTH4L080N120SC1?
The typical static drain-to-source on resistance (RDS(on)) is 80 mΩ at VGS = 20 V and ID = 20 A.
- What are the recommended operation values for the gate-to-source voltage?
The recommended operation values for the gate-to-source voltage (VGSop) are -5 to +20 V at TC < 150°C.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) is 29 A at VGS = 20 V and TC = 25°C.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 0.88 °C/W.
- Is the NTH4L080N120SC1 RoHS compliant?
- What are some typical applications of the NTH4L080N120SC1?
Typical applications include Industrial Motor Drive, UPS, Boost Inverter, and PV Charger.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +175 °C.
- What is the turn-on delay time of the NTH4L080N120SC1?
The turn-on delay time (td(on)) is typically 9 to 18 ns at VCC = 800 V, IC = 20 A, VGS = -5/20 V, and RG = 4.7 Ω.
- What is the total gate charge of the NTH4L080N120SC1?
The total gate charge (Qg) is typically 56 nC at VDD = 600 V and ID = 20 A.
