Overview
The NTH4L020N120SC1 is a Silicon Carbide (SiC) MOSFET developed by onsemi, utilizing the EliteSiC technology. This component offers superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. The SiC technology ensures low ON resistance, compact chip size, and reduced capacitance and gate charge, leading to system benefits such as highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Key Specifications
| Parameter | Value |
|---|---|
| Blocking Voltage (BVDSS) | 1200 V |
| Maximum Drain Current (ID(max)) | 84 A |
| Typical ON Resistance (RDS(on)) at 25°C | 20 mΩ (Typ), 28 mΩ (Max) at Vgs = 20V, Id = 60A |
| Total Gate Charge (Qg) | 203 nC |
| Output Capacitance | 260 pF |
| Junction Temperature (Tj(max)) | 175°C |
| Package Type | TO-247-4L |
Key Features
- Ultra-low ON resistance (RDS(on)) of 20 mΩ (Typical)
- High-speed switching and low capacitance, ensuring efficient operation
- 100% UIL (Unclamped Inductive Load) tested for reliability
- Compact chip size reducing system size and increasing power density
- Reduced EMI due to the advanced SiC technology
Applications
- Power Factor Correction (PFC)
- Boost Inverter
- PV Charging
- Solar Inverter
- Network Power Supply
- Server Power Supply
- Charging Stations
Q & A
- What is the blocking voltage of the NTH4L020N120SC1 MOSFET?
1200 V
- What is the typical ON resistance of the NTH4L020N120SC1?
20 mΩ at 25°C
- What is the maximum drain current for this MOSFET?
84 A
- What package type is the NTH4L020N120SC1 available in?
TO-247-4L
- What are the key benefits of using SiC technology in this MOSFET?
Higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size
- What is the junction temperature limit for this component?
175°C
- Is the NTH4L020N120SC1 UIL tested?
- What are some common applications for the NTH4L020N120SC1?
PFC, Boost Inverter, PV Charging, Solar Inverter, Network Power Supply, Server Power Supply, Charging Stations
- What is the total gate charge for this MOSFET?
203 nC
- What is the output capacitance of the NTH4L020N120SC1?
260 pF
