Overview
The NTH4L040N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, utilizing advanced technology to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. This device is characterized by its low ON resistance, compact chip size, and low capacitance and gate charge, resulting in higher efficiency, faster operation frequencies, increased power density, reduced EMI, and a smaller system size.
Key Specifications
| Parameter | Value |
|---|---|
| Blocking Voltage (BV)DSS | 1200 V |
| Maximum Drain Current (ID(max)) | 58 A |
| Typical ON Resistance (RDS(on)) at 25°C | 40 mΩ |
| Gate Charge (Qg) | 106 nC |
| Output Capacitance | 137 pF |
| Maximum Junction Temperature (Tj(max)) | 175 °C |
| Package Type | TO-247-4L |
Key Features
- Ultra-low ON resistance (RDS(on)) of 40 mΩ at 25°C
- High-speed switching and low capacitance
- 100% UIL tested for reliability
- Compact chip size ensuring low capacitance and gate charge
- High efficiency, faster operation frequency, and increased power density
- Reduced EMI and system size
Applications
- Power Factor Correction (PFC)
- Boost Inverter
- Photovoltaic (PV) Charging
- Solar Inverter
- Network Power Supply
- Charging Stations
Q & A
- What is the blocking voltage of the NTH4L040N120SC1 MOSFET?
The blocking voltage is 1200 V. - What is the typical ON resistance of the NTH4L040N120SC1 at 25°C?
The typical ON resistance is 40 mΩ. - What is the maximum drain current of the NTH4L040N120SC1?
The maximum drain current is 58 A. - What is the package type of the NTH4L040N120SC1?
The package type is TO-247-4L. - What are the key applications of the NTH4L040N120SC1?
Key applications include PFC, Boost Inverter, PV Charging, Solar Inverter, Network Power Supply, and Charging Stations. - What are the benefits of using Silicon Carbide (SiC) in MOSFETs?
The benefits include superior switching performance, higher reliability, low ON resistance, high-speed switching, and reduced EMI and system size. - What is the maximum junction temperature of the NTH4L040N120SC1?
The maximum junction temperature is 175 °C. - Is the NTH4L040N120SC1 100% UIL tested?
Yes, it is 100% UIL tested for reliability. - What is the gate charge of the NTH4L040N120SC1?
The gate charge is 106 nC. - What is the output capacitance of the NTH4L040N120SC1?
The output capacitance is 137 pF.
