Overview
The NTHL020N120SC1 is a Silicon Carbide (SiC) MOSFET manufactured by ON Semiconductor. This N-channel MOSFET is part of the EliteSiC family and is designed for high-performance applications requiring low on-resistance and high switching speeds. With a drain-to-source voltage rating of 1200 V and a maximum drain current of 103 A, it is suitable for a variety of power conversion and management systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 1200 | V |
| Gate-to-Source Voltage | VGS | -15/+25 | V |
| Maximum Drain Current | ID | 103 | A |
| Maximum Junction Temperature | TJ | 175 | °C |
| On-State Resistance (RDS(on)) | RDS(on) | 20 mΩ (typ) | mΩ |
| Total Gate Charge (QG(tot)) | QG(tot) | 203 nC | nC |
| Output Capacitance (Coss) | Coss | 260 pF | pF |
| Maximum Power Dissipation | Pd | 535 W | W |
| Package Type | TO-247-3L |
Key Features
- Typical on-state resistance (RDS(on)) of 20 mΩ, ensuring low power losses.
- Ultra-low gate charge (QG(tot)) of 203 nC, facilitating high-speed switching.
- Low output capacitance (Coss) of 260 pF, enhancing switching performance.
- 100% UIL tested for reliability and robustness.
- Halide-free and RoHS compliant with exemption 7a, Pb-free on second-level interconnection.
Applications
- Uninterruptible Power Supplies (UPS)
- DC-DC Converters
- Boost Inverters
Q & A
- What is the maximum drain-to-source voltage of the NTHL020N120SC1 MOSFET?
The maximum drain-to-source voltage (VDSS) is 1200 V.
- What is the typical on-state resistance (RDS(on)) of this MOSFET?
The typical on-state resistance (RDS(on)) is 20 mΩ.
- What is the maximum gate-to-source voltage (VGS) for the NTHL020N120SC1?
The maximum gate-to-source voltage (VGS) is -15/+25 V.
- What is the total gate charge (QG(tot)) of this MOSFET?
The total gate charge (QG(tot)) is 203 nC.
- What is the maximum drain current (ID) of the NTHL020N120SC1?
The maximum drain current (ID) is 103 A.
- What is the maximum junction temperature (TJ) for this MOSFET?
The maximum junction temperature (TJ) is 175°C.
- What type of package does the NTHL020N120SC1 come in?
The NTHL020N120SC1 comes in a TO-247-3L package.
- Is the NTHL020N120SC1 RoHS compliant?
Yes, the NTHL020N120SC1 is RoHS compliant with exemption 7a and Pb-free on second-level interconnection.
- What are some typical applications for the NTHL020N120SC1 MOSFET?
Typical applications include UPS, DC-DC converters, and boost inverters.
- What is the maximum power dissipation (Pd) of the NTHL020N120SC1?
The maximum power dissipation (Pd) is 535 W.
