Overview
The NTHL080N120SC1A is a Silicon Carbide (SiC) MOSFET produced by onsemi, utilizing advanced technology to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. This device features low ON resistance and a compact chip size, resulting in low capacitance and gate charge. These characteristics enable system benefits such as highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Key Specifications
| Parameter | Value |
|---|---|
| Blocking Voltage (BVDSS) | 1200 V |
| Maximum Drain Current (ID(max)) | 31 A |
| Typical ON Resistance (RDS(on)) at 25°C | 80 mΩ at Vgs = 20V, Id = 20A |
| Total Gate Charge (Qg) | 56 nC |
| Output Capacitance | 80 pF |
| Junction Temperature (Tj(max)) | 175°C |
| Package Type | TO-247-3LD |
Key Features
- High Speed Switching and Low Capacitance
- 100% UIL Tested
- Low ON Resistance and Compact Chip Size
- Higher Efficiency and Faster Operation Frequency
- Increased Power Density and Reduced EMI
- Reduced System Size
Applications
- Power Factor Correction (PFC)
- Boost Inverter
- Photovoltaic (PV) Charging
- Solar Inverter
- Network Power Supply
- Server Power Supply
Q & A
- What is the blocking voltage of the NTHL080N120SC1A MOSFET?
The blocking voltage (BVDSS) of the NTHL080N120SC1A MOSFET is 1200 V.
- What is the maximum drain current of the NTHL080N120SC1A?
The maximum drain current (ID(max)) of the NTHL080N120SC1A is 31 A.
- What is the typical ON resistance of the NTHL080N120SC1A?
The typical ON resistance (RDS(on)) at 25°C is 80 mΩ at Vgs = 20V, Id = 20A.
- What is the total gate charge of the NTHL080N120SC1A?
The total gate charge (Qg) is 56 nC.
- What is the junction temperature limit of the NTHL080N120SC1A?
The junction temperature (Tj(max)) limit is 175°C.
- In what package is the NTHL080N120SC1A available?
The NTHL080N120SC1A is available in the TO-247-3LD package.
- What are some of the key applications for the NTHL080N120SC1A?
Key applications include Power Factor Correction (PFC), Boost Inverter, Photovoltaic (PV) Charging, Solar Inverter, Network Power Supply, and Server Power Supply.
- What are the benefits of using Silicon Carbide (SiC) technology in the NTHL080N120SC1A?
The benefits include superior switching performance, higher reliability, low ON resistance, low capacitance, higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size).
- Is the NTHL080N120SC1A 100% UIL tested?
Yes, the NTHL080N120SC1A is 100% UIL tested).
- Where can I find more detailed specifications and resources for the NTHL080N120SC1A?
You can find more detailed specifications and resources on the onsemi website, including the datasheet and product support pages).
