Overview
The NTD5865NLT4G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed for applications requiring high current capability, fast switching, and low gate charge. It is part of the TrenchFET family, known for its advanced trench technology that enhances power density and efficiency. The NTD5865NLT4G is packaged in a DPAK (TO-252) case, which is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDS | 60 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp < 10 μs) | VGS | ±30 | V |
| Continuous Drain Current (RθJC) at TC = 25°C | ID | 46 | A |
| Continuous Drain Current (RθJC) at TC = 100°C | ID | 33 | A |
| Power Dissipation (RθJC) at TC = 25°C | PD | 71 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 203 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 175 | °C |
| Drain-to-Source On-State Resistance at VGS = 10 V | RDS(on) | 13 - 16 | mΩ |
| Drain-to-Source On-State Resistance at VGS = 4.5 V | RDS(on) | 16 - 19 | mΩ |
| Total Gate Charge at VGS = 10 V | QG(TOT) | 29 | nC |
| Rise Time | tr | 12.4 | ns |
| Fall Time | tf | 4.4 | ns |
Key Features
- Low Gate Charge: Enhances switching speed and reduces power losses.
- Fast Switching: Ideal for high-frequency applications.
- High Current Capability: Supports up to 46 A continuous drain current.
- 100% Avalanche Tested: Ensures robustness against transient conditions.
- Pb-Free, Halogen-Free, and RoHS Compliant: Environmentally friendly and compliant with modern regulatory standards.
- High Junction Temperature: Operates reliably up to 175°C.
Applications
- Power Supplies: Suitable for DC-DC converters, power adapters, and switch-mode power supplies.
- Motor Control: Used in motor drives, servo motors, and other high-current motor applications.
- Automotive Systems: Applicable in automotive electronics, including battery management and power steering systems.
- Industrial Control: Employed in industrial automation, robotics, and control systems.
- Renewable Energy Systems: Used in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTD5865NLT4G MOSFET?
The maximum drain-to-source voltage is 60 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current rating at 25°C is 46 A.
- What is the typical on-state resistance at VGS = 10 V?
The typical on-state resistance at VGS = 10 V is 13-16 mΩ.
- Is the NTD5865NLT4G MOSFET RoHS compliant?
Yes, the NTD5865NLT4G MOSFET is Pb-free, halogen-free, and RoHS compliant.
- What is the maximum junction temperature of the NTD5865NLT4G?
The maximum junction temperature is 175°C.
- What is the rise time of the NTD5865NLT4G MOSFET?
The rise time is 12.4 ns.[
- What is the fall time of the NTD5865NLT4G MOSFET?
The fall time is 4.4 ns.[
- What is the total gate charge at VGS = 10 V?
The total gate charge at VGS = 10 V is 29 nC.[
- In what package is the NTD5865NLT4G MOSFET available?
The NTD5865NLT4G MOSFET is available in a DPAK (TO-252) package.
- What are some typical applications of the NTD5865NLT4G MOSFET?
Typical applications include power supplies, motor control, automotive systems, industrial control, and renewable energy systems.
