Overview
The NTD5867NLT4G is a high-performance, N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and high current capability, making it suitable for a variety of power management applications. The NTD5867NLT4G is packaged in a DPAK (TO-252) case, which is Pb-free, halogen-free, and RoHS compliant. This MOSFET is 100% avalanche tested, ensuring robust performance under demanding conditions.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp < 10 μs) | VGS | ±30 | V |
| Continuous Drain Current (RθJC) Steady State | ID | 20 A (TC = 25°C), 13 A (TC = 100°C) | A |
| Power Dissipation (RθJC) | PD | 36 W (TC = 25°C) | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 76 A | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 150 °C | °C |
| Drain-to-Source On Resistance | RDS(on) | 26-39 mΩ (VGS = 10 V, ID = 10 A) | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 3.5 °C/W | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 45 °C/W | °C/W |
Key Features
- Low RDS(on): The NTD5867NLT4G features a low on-resistance of 26-39 mΩ at VGS = 10 V and ID = 10 A, reducing power losses and improving efficiency.
- High Current Capability: This MOSFET can handle continuous drain currents up to 20 A and pulsed drain currents up to 76 A.
- 100% Avalanche Tested: Ensures the device can withstand high energy pulses, enhancing reliability in demanding applications.
- Pb-free, Halogen-free, and RoHS Compliant: The DPAK package is environmentally friendly and compliant with international regulations.
- Wide Operating Temperature Range: The device operates from -55°C to 150°C, making it suitable for a broad range of applications.
Applications
- Power Management: Ideal for power supply designs, DC-DC converters, and voltage regulators.
- Motor Control: Suitable for motor drive applications due to its high current handling and low on-resistance.
- Automotive Systems: Can be used in various automotive applications such as battery management, power steering, and anti-lock braking systems (ABS).
- Industrial Power Systems: Applicable in industrial power supplies, inverters, and other high-power electronic systems.
Q & A
- What is the maximum drain-to-source voltage of the NTD5867NLT4G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of this MOSFET at 25°C?
The continuous drain current (ID) is 20 A at 25°C.
- What is the typical on-resistance (RDS(on)) of the NTD5867NLT4G?
The typical on-resistance (RDS(on)) is 39 mΩ at VGS = 10 V and ID = 10 A.
- Is the NTD5867NLT4G Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the operating junction temperature range of this MOSFET?
The operating junction temperature range is -55°C to 150°C.
- What is the maximum power dissipation of the NTD5867NLT4G?
The maximum power dissipation (PD) is 36 W at 25°C.
- What is the junction-to-case thermal resistance of this device?
The junction-to-case thermal resistance (RθJC) is 3.5 °C/W.
- Can the NTD5867NLT4G handle high energy pulses?
Yes, the device is 100% avalanche tested, ensuring it can withstand high energy pulses.
- What are some common applications for the NTD5867NLT4G?
Common applications include power management, motor control, automotive systems, and industrial power systems.
- What package type is the NTD5867NLT4G available in?
The device is available in a DPAK (TO-252) package.
