Overview
The NTD5865NT4G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer low gate charge, fast switching, and high current capability, making it suitable for a variety of power management and switching applications. The NTD5865NT4G is part of onsemi's portfolio of power MOSFETs that are known for their reliability, efficiency, and compliance with environmental standards such as RoHS and halogen-free requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp < 10 μs) | VGS | ±30 | V |
| Continuous Drain Current (RθJC) at TC = 25°C | ID | 43 | A |
| Continuous Drain Current (RθJC) at TC = 100°C | ID | 31 | A |
| Power Dissipation (RθJC) at TC = 25°C | PD | 71 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 192 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 175 | °C |
| Source Current (Body Diode) | IS | 43 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 36 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 2.1 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 49 | °C/W |
| Drain-to-Source On Resistance | RDS(on) | 14 - 18 | mΩ |
Key Features
- Low Gate Charge: The NTD5865NT4G features low gate charge, which enhances switching performance and reduces power losses.
- Fast Switching: This MOSFET is designed for fast switching, making it ideal for high-frequency applications.
- High Current Capability: With a continuous drain current of 43 A at 25°C, this device can handle high current requirements.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- Environmental Compliance: Pb-free, halogen-free, and RoHS compliant, making it suitable for environmentally conscious designs.
Applications
The NTD5865NT4G is versatile and can be used in a variety of applications, including:
- Power Supplies: DC-DC converters, switching power supplies, and power modules.
- Motor Control: Motor drives, servo motors, and other motor control systems.
- Automotive Systems: Battery management, electric vehicle charging, and other automotive power management systems.
- Industrial Automation: Control systems, power distribution units, and other industrial automation applications.
Q & A
- What is the maximum drain-to-source voltage of the NTD5865NT4G?
The maximum drain-to-source voltage (VDSS) is 60 V. - What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 43 A. - Is the NTD5865NT4G environmentally compliant?
Yes, it is Pb-free, halogen-free, and RoHS compliant. - What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 2.1 °C/W. - What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from -55°C to 175°C. - What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 36 mJ. - What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C. - What are the key features of the NTD5865NT4G?
The key features include low gate charge, fast switching, high current capability, and 100% avalanche testing. - In which applications can the NTD5865NT4G be used?
It can be used in power supplies, motor control, automotive systems, and industrial automation. - What is the drain-to-source on resistance?
The drain-to-source on resistance (RDS(on)) is between 14 and 18 mΩ.
