Overview
The NTD5862NT4G is a high-performance, N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and high current capability, making it suitable for a variety of power management and switching applications. The NTD5862NT4G is available in a DPAK package and is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | V |
| Gate-to-Source Voltage - Non-Repetitive (tp < 10 μs) | VGS | ±30 | V |
| Continuous Drain Current (RθJC) at TC = 25°C | ID | 98 | A |
| Continuous Drain Current (RθJC) at TC = 100°C | ID | 69 | A |
| Power Dissipation (RθJC) at TC = 25°C | PD | 115 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 335 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 175 | °C |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 45 A | RDS(on) | 4.4 - 5.7 | mΩ |
| Junction-to-Case Thermal Resistance (RθJC) | RθJC | 1.3 | °C/W |
| Junction-to-Ambient Thermal Resistance (RθJA) | RθJA | 37 | °C/W |
Key Features
- Low On-Resistance (RDS(on)): The NTD5862NT4G features a low RDS(on) of 4.4 to 5.7 mΩ, which minimizes power losses and enhances efficiency in high-current applications.
- High Current Capability: With a continuous drain current of 98 A at TC = 25°C, this MOSFET is suitable for high-power applications.
- 100% Avalanche Tested: Ensures robustness and reliability under extreme conditions.
- Pb-Free, Halogen-Free, and RoHS Compliant: Meets environmental and regulatory standards.
- High Gate Threshold Voltage: VGS(TH) ranges from 2.0 to 4.0 V, providing a stable switching threshold.
Applications
- Power Supplies: Suitable for high-power DC-DC converters and power supply units.
- Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
- Switching Regulators: Ideal for synchronous rectification in switching regulators.
- Industrial Automation: Can be used in various industrial automation and control systems.
- Automotive Systems: Applicable in automotive power management and control systems.
Q & A
- What is the maximum drain-to-source voltage of the NTD5862NT4G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 98 A.
- What is the typical on-resistance (RDS(on)) of the NTD5862NT4G?
The typical on-resistance (RDS(on)) is 5.7 mΩ at VGS = 10 V and ID = 45 A.
- Is the NTD5862NT4G Pb-free and RoHS compliant?
Yes, the NTD5862NT4G is Pb-free, halogen-free, and RoHS compliant.
- What is the junction-to-case thermal resistance (RθJC)?
The junction-to-case thermal resistance (RθJC) is 1.3 °C/W.
- What are the typical applications of the NTD5862NT4G?
The NTD5862NT4G is typically used in power supplies, motor control, switching regulators, industrial automation, and automotive systems.
- What is the maximum gate-to-source voltage?
The maximum continuous gate-to-source voltage (VGS) is ±20 V, and the non-repetitive gate-to-source voltage is ±30 V for tp < 10 μs.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to 175 °C.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is 335 A for tp = 10 μs.
- Is the NTD5862NT4G 100% avalanche tested?
Yes, the NTD5862NT4G is 100% avalanche tested.
