NTD5802NT4G
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onsemi NTD5802NT4G

Manufacturer No:
NTD5802NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 16.4A/101A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD5802NT4G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for high-power applications requiring low on-resistance and high current handling. The MOSFET is packaged in a TO-252-2 (DPAK) package, which is suitable for a wide range of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
On-Resistance (Rds(on)) @ 10V4.4 mΩ
Maximum Continuous Drain Current (Id)50 A
Maximum Pulsed Drain Current (Idm)300 A
Threshold Voltage (Vth)1-3.5 V @ 250 μA
Package TypeTO-252-2 (DPAK)
Power Dissipation (Pd)2.5 W

Key Features

  • Low on-resistance (Rds(on)) of 4.4 mΩ @ 10V, ensuring minimal power loss.
  • High maximum continuous drain current (Id) of 50 A and maximum pulsed drain current (Idm) of 300 A.
  • Wide operating voltage range up to 40 V.
  • Threshold voltage range of 1-3.5 V @ 250 μA, providing a stable switching threshold.
  • Compact TO-252-2 (DPAK) package for efficient thermal management and space-saving designs.

Applications

  • Power management in DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Switching applications in industrial and automotive systems.
  • High-power audio amplifiers.
  • General-purpose power switching.

Q & A

  1. What is the voltage rating of the NTD5802NT4G MOSFET? The voltage rating (Vds) of the NTD5802NT4G is 40 V.
  2. What is the on-resistance (Rds(on)) of the NTD5802NT4G? The on-resistance (Rds(on)) is 4.4 mΩ @ 10V.
  3. What is the maximum continuous drain current (Id) of the NTD5802NT4G? The maximum continuous drain current (Id) is 50 A.
  4. What is the maximum pulsed drain current (Idm) of the NTD5802NT4G? The maximum pulsed drain current (Idm) is 300 A.
  5. What is the package type of the NTD5802NT4G? The package type is TO-252-2 (DPAK).
  6. What is the power dissipation (Pd) of the NTD5802NT4G? The power dissipation (Pd) is 2.5 W.
  7. What are some common applications of the NTD5802NT4G? Common applications include power management in DC-DC converters, motor control, switching applications in industrial and automotive systems, and high-power audio amplifiers.
  8. Is the NTD5802NT4G RoHS compliant? Yes, the NTD5802NT4G is RoHS compliant.
  9. What is the threshold voltage range of the NTD5802NT4G? The threshold voltage range is 1-3.5 V @ 250 μA.
  10. Where can I find detailed specifications for the NTD5802NT4G? Detailed specifications can be found in the datasheet available on official websites and distributors like Mouser, Digi-Key, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:16.4A (Ta), 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5025 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 93.75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NVD5802NT4G
NVD5802NT4G
MOSFET N-CH 40V 16.4A/101A DPAK
NVD5802NT4G-TB01
NVD5802NT4G-TB01
MOSFET N-CH 40V 16.4A/101A DPAK

Similar Products

Part Number NTD5802NT4G NTD5862NT4G NTD5803NT4G NTD5807NT4G NTD5804NT4G NTD5805NT4G NTD5806NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Last Time Buy Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 101A (Tc) 98A (Tc) 76A (Tc) 23A (Tc) 69A (Tc) 51A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V 4.5V, 10V 5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V 5.7mOhm @ 45A, 10V 7.2mOhm @ 50A, 10V 31mOhm @ 5A, 10V 8.5mOhm @ 30A, 10V 9.5mOhm @ 15A, 10V 19mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 4V @ 250µA 3.5V @ 250µA 2.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 82 nC @ 10 V 51 nC @ 10 V 20 nC @ 10 V 45 nC @ 10 V 80 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5025 pF @ 25 V 6000 pF @ 25 V 3220 pF @ 25 V 603 pF @ 25 V 2850 pF @ 25 V 1725 pF @ 25 V 860 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc) 115W (Tc) 83W (Tc) 33W (Tc) 71W (Tc) 47W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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